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Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC

IOP conference series. Materials Science and Engineering, 2014-01, Vol.56 (1), p.12003-5

2014

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Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers

IOP conference series. Materials Science and Engineering, 2014-01, Vol.56 (1), p.12005-5, Article 012005

2014

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Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

Applied physics. B, Lasers and optics, 2019-09, Vol.125 (9), p.1-5, Article 172

2019

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Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations

Journal of physics. D, Applied physics, 2012-06, Vol.45 (23), p.235107-1-6

2012

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Effects of source material on epitaxial growth of fluorescent SiC

Thin solid films, 2012-11, Vol.522, p.7-10

2012

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Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Solid-state electronics, 2013-03, Vol.81, p.72-77

2013

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Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers

IOP conference series. Materials Science and Engineering, 2014-01, Vol.56 (1), p.12006-4

2014

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Fluorescent SiC as a new material for white LEDs

Physica scripta, 2012-03, Vol.T148, p.14002

2012

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Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

Thin solid films, 2012-11, Vol.522, p.33-35

2012

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Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Materials letters, 2012, Vol.67 (1), p.300-302

2012

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Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

IOP conference series. Materials Science and Engineering, 2014-01, Vol.56 (1), p.12004-6

2014

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Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Applied surface science, 2022-12, Vol.606, p.154896, Article 154896

2022

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Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3041-3043

2012

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Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

Materials science forum, 2014-01, Vol.778-780, p.243-246

2014

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High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

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Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3038-3040

2012

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Nucleation and growth of polycrystalline SiC

IOP conference series. Materials Science and Engineering, 2014-01, Vol.56 (1), p.12001-6

2014

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The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

IOP conference series. Materials Science and Engineering, 2014-01, Vol.56 (1), p.12002-6

2014

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Cubic silicon carbide as a potential photovoltaic material

Solar energy materials and solar cells, 2016-02, Vol.145 (Part 2), p.104-108

2016

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Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Materials science forum, 2019-07, Vol.963, p.353-356

2019

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Shockley-Frank stacking faults in 6H-SiC

Journal of applied physics, 2012-06, Vol.111 (11), p.113527

2012

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Solar Driven Energy Conversion Applications Based on 3C-SiC

Materials Science Forum, 2016, Vol.858, p.1028-1031

2016

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(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS transactions, 2017, Vol.80 (7), p.107-115

2017

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Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

Optical materials express, 2013-01, Vol.3 (1), p.86-94

2013

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Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Materials science forum, 2012, Vol.717-720, p.233-236

2012

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Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC

Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers

Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations

Effects of source material on epitaxial growth of fluorescent SiC

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers

Fluorescent SiC as a new material for white LEDs

Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD

Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Nucleation and growth of polycrystalline SiC

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Cubic silicon carbide as a potential photovoltaic material

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Shockley-Frank stacking faults in 6H-SiC

Solar Driven Energy Conversion Applications Based on 3C-SiC

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

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