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Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Nanoscale research letters, 2011-07, Vol.6 (1), p.478-478, Article 478

2011

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Multiscale investigation of graphene layers on 6H-SiC(000-1)

Nanoscale research letters, 2011-02, Vol.6 (1), p.171-171, Article 171

2011

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Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

Materials science forum, 2012, Vol.711, p.235-241

2012

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Advanced materials nanocharacterization

Nanoscale research letters, 2011-01, Vol.6 (1), p.107-107, Article 107

2011

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Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Materials science forum, 2012, Vol.711, p.164-168

2012

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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Nanoscale research letters, 2011-02, Vol.6 (1), p.141-141, Article 141

2011

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Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Materials science forum, 2011-01, Vol.679-680, p.314-317

2011

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6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

Materials science forum, , Vol.645-648, p.347-350

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Journal of crystal growth, 2012-06, Vol.349 (1), p.27-35

2012

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Electrical transport properties of aluminum-implanted 4H-SiC

Journal of applied physics, 2005-07, Vol.98 (2), p.023706-023706-9

2005

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Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6264-6277

2007

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PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

Materials science forum, 2006-10, Vol.527-529, p.1047-1050

2006

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Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates

Journal of physics. D, Applied physics, 2010-09, Vol.43 (37), p.374011-374011

2010

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Selective epitaxial growth of graphene on SiC

Applied physics letters, 2008-09, Vol.93 (12), p.123503-123503-3

2008

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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (8), Article 085422

2014

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Early stage formation of graphene on the C face of 6H-SiC

Applied physics letters, 2008-12, Vol.93 (26), p.263102-263102-3

2008

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Effect of initial substrate conditions on growth of cubic silicon carbide

Journal of crystal growth, 2011-06, Vol.324 (1), p.7-14

2011

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Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

Materials science forum, 2002-04, Vol.389-393, p.729-732

2002

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Optical properties of as-grown and process-induced stacking faults in 4H-SiC

Physica Status Solidi (b), 2008-07, Vol.245 (7), p.1337-1355

2008

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Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

Physical review. B, Condensed matter and materials physics, 2011, Vol.83 (19), p.195201, Article 195201

2011

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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Materials science forum, 2014-10, Vol.806, p.51-55

2014

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Prospects for 3C-SiC bulk crystal growth

Journal of crystal growth, 2008-03, Vol.310 (5), p.976-981

2008

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Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC

Journal of applied physics, 2010-07, Vol.108 (1), p.013503-013503-10

2010

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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Materials science forum, 2002-04, Vol.389-393, p.343-346

2002

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Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Multiscale investigation of graphene layers on 6H-SiC(000-1)

Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

Advanced materials nanocharacterization

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Electrical transport properties of aluminum-implanted 4H-SiC

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates

Selective epitaxial growth of graphene on SiC

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Early stage formation of graphene on the C face of 6H-SiC

Effect of initial substrate conditions on growth of cubic silicon carbide

Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

Optical properties of as-grown and process-induced stacking faults in 4H-SiC

Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Prospects for 3C-SiC bulk crystal growth

Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

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