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Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Journal of applied physics, 2016-09, Vol.120 (12)

2016

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Magnetic properties of GaAs-Fe3Si core-shell nanowires—A comparison of ensemble and single nanowire investigation

AIP advances, 2017-05, Vol.7 (5), p.056305-056305-6

2017

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Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Applied physics letters, 2013-02, Vol.102 (5)

2013

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Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Journal of applied physics, 2011-07, Vol.110 (2), p.023505-023505-8

2011

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Interface engineering for improved growth of GaSb on Si(111)

Journal of crystal growth, 2011-05, Vol.323 (1), p.401-404

2011

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Semicoherent growth of single-crystal β-In 2 S 3 layers on InP(111) and InAs(111)

CrystEngComm, 2019-09, Vol.21 (38), p.5818-5823

2019

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Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth

Review of scientific instruments, 2003-03, Vol.74 (3), p.1267-1273

2003

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Overgrowth of Bi2Te3 nanoislands on Fe-based epitaxial ferromagnetic layers

CrystEngComm, 2018, Vol.20 (29), p.4173-4178

2018

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Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100)

Applied physics express, 2012-10, Vol.5 (10), p.105501

2012

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In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

Applied physics letters, 2003-12, Vol.83 (25), p.5178-5180

2003

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Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study

Physical review applied, 2016-12, Vol.6 (6), Article 064023

2016

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Axiotaxy of Bismuth Telluride Films on InP(111)B by High-Temperature Hot Wall Epitaxy

Crystal growth & design, 2017-04, Vol.17 (4), p.1977-1981

2017

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Overgrowth of Bi 2 Te 3 nanoislands on Fe-based epitaxial ferromagnetic layers

CrystEngComm, 2018, Vol.20 (29), p.4173-4178

2018

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Semicoherent growth of single-crystal β-InS layers on InP(111) and InAs(111)

CrystEngComm, 2019-09, Vol.21 (38), p.5818-5823

2019

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Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1)

Surface science, 2007-02, Vol.601 (3), p.814-821

2007

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.878-888

2011

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Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

Journal of applied crystallography, 2014-02, Vol.47 (1), p.256-263

2014

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GaAs–Fe3Si Core–Shell Nanowires: Nanobar Magnets

Nano letters, 2013-12, Vol.13 (12), p.6203-6209

2013

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Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Journal of physics. D, Applied physics, 2015-09, Vol.48 (38), p.385105

2015

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TEM-based analysis of the crystal structure of a Ge-rich layer sandwiched between spintronic Fe 3 Si

Acta crystallographica. Section A, Foundations and advances, 2018-08, Vol.74 (a2), p.e311-e311

2018

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Layer-by-layer growth of GaAs( [formula omitted]) studied by in situ synchrotron X-ray diffraction

Surface science, 2003-02, Vol.525 (1), p.126-136

2003

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Polarity-Induced Selective Area Epitaxy of GaN Nanowires

Nano letters, 2017-01, Vol.17 (1), p.63-70

2017

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Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction

Journal of crystal growth, 2005-05, Vol.278 (1), p.449-457

2005

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Overgrowth of Bi2Te3 nanoislands on Fe-based epitaxial ferromagnetic layersElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ce00882e

2018-07

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Kinetic optimum of volmer-weber growth

Physical review letters, 2009-01, Vol.102 (1), p.016103-016103, Article 016103

2009

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Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Magnetic properties of GaAs-Fe3Si core-shell nanowires—A comparison of ensemble and single nanowire investigation

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Interface engineering for improved growth of GaSb on Si(111)

Semicoherent growth of single-crystal β-In 2 S 3 layers on InP(111) and InAs(111)

Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth

Overgrowth of Bi2Te3 nanoislands on Fe-based epitaxial ferromagnetic layers

Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100)

In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study

Axiotaxy of Bismuth Telluride Films on InP(111)B by High-Temperature Hot Wall Epitaxy

Overgrowth of Bi 2 Te 3 nanoislands on Fe-based epitaxial ferromagnetic layers

Semicoherent growth of single-crystal β-InS layers on InP(111) and InAs(111)

Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1)

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

GaAs–Fe3Si Core–Shell Nanowires: Nanobar Magnets

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

TEM-based analysis of the crystal structure of a Ge-rich layer sandwiched between spintronic Fe 3 Si

Layer-by-layer growth of GaAs( [formula omitted]) studied by in situ synchrotron X-ray diffraction

Polarity-Induced Selective Area Epitaxy of GaN Nanowires

Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction

Overgrowth of Bi2Te3 nanoislands on Fe-based epitaxial ferromagnetic layersElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ce00882e

Kinetic optimum of volmer-weber growth

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