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Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques

Semiconductor science and technology, 2014-01, Vol.29 (1), p.15004

2014

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Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC

Measurement science & technology, 2015-12, Vol.26 (12), p.125014-8

2015

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Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K

Physical review. B, 2020-07, Vol.102 (3), p.1, Article 035201

2020

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Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Fast and slow carrier recombination transients in highly excited 4H- and 3C-SiC crystals at room temperature

Journal of applied physics, 2010-07, Vol.108 (2), p.023705-023705-9

2010

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Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics

Optics and laser technology, 2021-02, Vol.134, p.106624, Article 106624

2021

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Photo-electrical and transport properties of hydrothermal ZnO

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers

Diamond and related materials, 2015-08, Vol.57, p.9-16

2015

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Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique

Applied physics letters, 2011-02, Vol.98 (8), p.082115-082115-3

2011

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Carrier dynamics in blue and green emitting InGaN MQWs

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.977-982

2015

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Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

Journal of applied physics, 2013-03, Vol.113 (10)

2013

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Carrier recombination and diffusivity in microcrystalline CVD-grown and single-crystalline HPHT diamonds

Physica status solidi. A, Applications and materials science, 2012-09, Vol.209 (9), p.1744-1749

2012

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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Applied physics letters, 2006-05, Vol.88 (20)

2006

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Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique

Physica status solidi. A, Applications and materials science, 2010-09, Vol.207 (9), p.2058-2063

2010

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Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals

Journal of physics. D, Applied physics, 2009-03, Vol.42 (5), p.055413-055413 (6)

2009

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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Journal of luminescence, 2017-08, Vol.188, p.301-306

2017

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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.223-227

2007

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Optical discrimination of deep trap contribution to carrier recombination in semi-insulating crystals

Journal of applied physics, 2009-07, Vol.106 (1), p.013704-013704-7

2009

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Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Applied physics letters, 2012-01, Vol.100 (2), p.022112-022112-4

2012

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Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers

Physica status solidi. A, Applications and materials science, 2013-10, Vol.210 (10), p.2022-2027

2013

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Dynamics of free carrier absorption in InN layers

Applied physics letters, 2009-10, Vol.95 (16), p.162103-162103-3

2009

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Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

Applied physics letters, 2003-08, Vol.83 (6), p.1157-1159

2003

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Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation

Physica status solidi. PSS-RRL. Rapid research letters, 2011-06, Vol.5 (5-6), p.193-195

2011

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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions

Applied physics letters, 2012-07, Vol.101 (4), p.41115

2012

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The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Semiconductor science and technology, 2006-07, Vol.21 (7), p.952-958

2006

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Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques

Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC

Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

Fast and slow carrier recombination transients in highly excited 4H- and 3C-SiC crystals at room temperature

Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics

Photo-electrical and transport properties of hydrothermal ZnO

Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers

Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique

Carrier dynamics in blue and green emitting InGaN MQWs

Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

Carrier recombination and diffusivity in microcrystalline CVD-grown and single-crystalline HPHT diamonds

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique

Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals

Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Optical discrimination of deep trap contribution to carrier recombination in semi-insulating crystals

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers

Dynamics of free carrier absorption in InN layers

Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation

Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

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