UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Applied physics letters, 2014-11, Vol.105 (21)

2014

Volltextzugriff (PDF)

Causes of incorrect carrier-type identification in van der Pauw-Hall measurements

Applied physics letters, 2008-12, Vol.93 (24), p.242108-242108-3

2008

Volltextzugriff (PDF)

Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2016-09, Vol.213 (9), p.2498-2502

2016

Volltextzugriff (PDF)

Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

APL materials, 2016-08, Vol.4 (8), p.86106-086106-8

2016

Volltextzugriff (PDF)

Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC

Applied physics express, 2017-05, Vol.10 (5), p.55501

2017

Volltextzugriff (PDF)

Nucleation and epitaxial growth of ZnO on GaN(0001)

Applied surface science, 2014-07, Vol.307, p.438-443

2014

Volltextzugriff (PDF)

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

Frontiers of materials science, 2015, Vol.9 (2), p.185-191

2015

Volltextzugriff (PDF)

Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy

Applied physics letters, 2005-01, Vol.86 (2), p.024106-024106-3

2005

Volltextzugriff (PDF)

Impact of O2 flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Physica Status Solidi (B): Basic Research, 2016-08, Vol.253 (8), p.1523-1528

2016

Volltextzugriff (PDF)

Impact of O sub(2) flow rate on the growth rate of ZnO(0001) and ZnO(000[Formulaomitted]) on GaN by plasma-assisted molecular beam epitaxy

Physica Status Solidi. B: Basic Solid State Physics, 2016-08, Vol.253 (8), p.1523-1528

2016

Volltextzugriff (PDF)

Impact of O 2 flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy: Impact of O2 flow rate on the growth of ZnO on GaN by PAMBE

physica status solidi (b), 2016-08, Vol.253 (8), p.1523-1528

2016

Volltextzugriff (PDF)

Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

Applied physics letters, 2004-03, Vol.84 (10), p.1671-1673

2004

Volltextzugriff (PDF)

Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001)

Applied physics letters, 2004-09, Vol.85 (11), p.1970-1972

2004

Volltextzugriff (PDF)

Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride

Scientific reports, 2014-08, Vol.4 (1), p.6146-6146, Article 6146

2014

Volltextzugriff (PDF)

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1), p.01AG07-01AG07-3

2012

Volltextzugriff (PDF)

Investigation of Si and O Donor Impurities in Unintentionally Doped MBE-Grown GaN on SiC(0001) Substrate

Journal of electronic materials, 2017-08, Vol.46 (8), p.4898-4902

2017

Volltextzugriff (PDF)

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1S), p.1

2012

Volltextzugriff (PDF)

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

Journal of crystal growth, 2015-09, Vol.426, p.129-134

2015

Volltextzugriff (PDF)

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

IEEE journal of quantum electronics, 2018-08, Vol.54 (4), p.1-6

2018

Volltextzugriff (PDF)

(Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001)

Physical review. B, Condensed matter and materials physics, 2008-07, Vol.78 (3)

2008

Volltextzugriff (PDF)

Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

IEEE transactions on semiconductor manufacturing, 2012-08, Vol.25 (3), p.494-501

2012

Volltextzugriff (PDF)

Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

Journal of electronic materials, 2010-05, Vol.39 (5), p.608-611

2010

Volltextzugriff (PDF)

Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4R), p.2112

2008

Volltextzugriff (PDF)

Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates: Group III Nitrides, Silicon Carbide, and Zinc Oxide

Journal of electronic materials, 2010, Vol.39 (5), p.608-611

2010

Volltextzugriff (PDF)

Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy

Physica status solidi. C, 2009-06, Vol.6 (6), p.1460-1463

2009

Volltextzugriff (PDF)

1 – 25 von 29

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(27)
Mit Volltextzugriff
(28)

Publikationsform

Artikel
(28)
Buchkapitel
(1)

Sprache

Englisch
(29)
Japanisch
(7)

Erscheinungsjahr

n.n

Thema

Science & Technology
(22)
Physics
(21)
Physical Sciences
(20)
Physics, Applied
(20)
Technology
(13)
Materials Science
(11)
Molecular Beam Epitaxy
(8)
Engineering
(7)
Engineering, Electrical & Electronic
(7)
Materials Science, Multidisciplinary
(7)
Gallium Nitrides
(6)
Gan
(6)
Zno
(6)
Zinc Oxide
(5)
Chemical Vapor Deposition
(4)
Gallium Nitride
(4)
Physics, Condensed Matter
(4)
Solid State Physics
(4)
Buffer Layers
(3)
Chemistry And Materials Science
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Causes of incorrect carrier-type identification in van der Pauw-Hall measurements

Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy

Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC

Nucleation and epitaxial growth of ZnO on GaN(0001)

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy

Impact of O2 flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Impact of O sub(2) flow rate on the growth rate of ZnO(0001) and ZnO(000[Formulaomitted]) on GaN by plasma-assisted molecular beam epitaxy

Impact of O 2 flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy: Impact of O2 flow rate on the growth of ZnO on GaN by PAMBE

Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001)

Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Investigation of Si and O Donor Impurities in Unintentionally Doped MBE-Grown GaN on SiC(0001) Substrate

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

(Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001)

Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes

Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates: Group III Nitrides, Silicon Carbide, and Zinc Oxide

Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy

Suchergebnisse filtern