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Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1464-1470

2007

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Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3267-3275

2007

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Si tunnel transistors with a novel silicided source and 46mV/dec swing

2010 Symposium on VLSI Technology, 2010, p.121-122

2010

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- k Gate Stacks

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2047-2056

2010

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Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

IEEE electron device letters, 2007-11, Vol.28 (11), p.1044-1046

2007

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Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.978-984

2004

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Gate stack technology for nanoscale devices

Materials today (Kidlington, England), 2006-06, Vol.9 (6), p.32-40

2006

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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2917-2923

2011

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A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

IEEE electron device letters, 2009-07, Vol.30 (7), p.760-762

2009

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Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

IEEE electron device letters, 2009-11, Vol.30 (11), p.1140-1142

2009

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The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

IEEE electron device letters, 2010-10, Vol.31 (10), p.1104-1106

2010

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Fermi-level pinning at the polysilicon/metal oxide interface-Part I

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.971-977

2004

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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DC08-04DC08-4

2010

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Spectroscopic analysis of the process-dependent microstructure of ultra-thin high-k gate dielectric film systems

Surface and interface analysis, 2006-12, Vol.38 (12-13), p.1588-1593

2006

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626-631

2010

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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.102-105

2008

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Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2656

2008

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The progress and challenges of threshold voltage control of high- k/metal-gated devices for advanced technologies (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1722-1727

2009

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Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1679-1687

2004

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Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm

Solid-state electronics, 2011-11, Vol.65-66, p.22-27

2011

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A low-frequency noise model for advanced gate-stack MOSFETs

Microelectronics and reliability, 2009-02, Vol.49 (2), p.103-112

2009

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Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Microelectronic engineering, 2013-12, Vol.112, p.80-83

2013

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Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

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Improvement of Thermal Stability of Ni Germanide Using a Ni-Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

IEEE transactions on nanotechnology, 2010-03, Vol.9 (2), p.258-263

2010

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Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap

Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement

Si tunnel transistors with a novel silicided source and 46mV/dec swing

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- k Gate Stacks

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

Gate stack technology for nanoscale devices

Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Spectroscopic analysis of the process-dependent microstructure of ultra-thin high-k gate dielectric film systems

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors

The progress and challenges of threshold voltage control of high- k/metal-gated devices for advanced technologies (Invited Paper)

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm

A low-frequency noise model for advanced gate-stack MOSFETs

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Improvement of Thermal Stability of Ni Germanide Using a Ni-Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

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