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Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation

Advanced materials (Weinheim), 2014-05, Vol.26 (18), p.2794-2799

2014

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Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits

Nano letters, 2011-10, Vol.11 (10), p.4393-4399

2011

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Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.621-624

2014

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Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9), p.094301-094301-9

2011

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Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

IEEE electron device letters, 2013-10, Vol.34 (10), p.1334-1336

2013

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V Th Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626-631

2010

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626-631

2010

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Cover Picture: Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (Phys. Status Solidi RRL 7/2014)

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.n/a

2014

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Moisture Adsorption in Plasma-Damaged Porous Low-k Dielectrics

MRS proceedings, 2008, Vol.1079 (1), Article 1079-N02-09

2008

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Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9R), p.94301

2011

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Erratum: "Mitigation of Complementary Metal--Oxide--Semiconductor Variability with Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors"

Japanese Journal of Applied Physics, 2011-11, Vol.50 (11), p.119201-119201-1

2011

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Simplistic graphene transfer process and its impact on contact resistance

Applied physics letters, 2013-05, Vol.102 (18), p.183115

2013

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Energy reversible switching from amorphous metal based nanoelectromechanical switch

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013), 2013, p.366-369

2013

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Field-Effect Transistors: Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation (Adv. Mater. 18/2014)

Advanced materials (Weinheim), 2014-05, Vol.26 (18), p.2765-2765

2014

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-[Formula Omitted]/Metal Gates CMOS FinFETs for Multi- [Formula Omitted] Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626

2010

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626-631

2010

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Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”

Japanese Journal of Applied Physics, 2011-11, Vol.50 (11R), p.119201

2011

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.626-631

2010

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Volltext

Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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High mobility SiGe shell-Si core omega gate pFETS

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.136-138

2009

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Combatting Social Isolation Among Older Adults in a Time of Physical Distancing: The COVID-19 Social Connectivity Paradox

Frontiers in public health, 2020-07, Vol.8, p.403

2020

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Phylogenomic Analyses Support Traditional Relationships within Cnidaria

PloS one, 2015-10, Vol.10 (10), p.e0139068-e0139068

2015

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Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation

Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches

Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V Th Engineering

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering

Cover Picture: Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (Phys. Status Solidi RRL 7/2014)

Moisture Adsorption in Plasma-Damaged Porous Low-k Dielectrics

Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches

Erratum: "Mitigation of Complementary Metal--Oxide--Semiconductor Variability with Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors"

Simplistic graphene transfer process and its impact on contact resistance

Energy reversible switching from amorphous metal based nanoelectromechanical switch

Field-Effect Transistors: Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation (Adv. Mater. 18/2014)

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-[Formula Omitted]/Metal Gates CMOS FinFETs for Multi- [Formula Omitted] Engineering

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering

Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering

Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

High mobility SiGe shell-Si core omega gate pFETS

Combatting Social Isolation Among Older Adults in a Time of Physical Distancing: The COVID-19 Social Connectivity Paradox

2017 ACC/AHA/AAPA/ABC/ACPM/AGS/APhA/ASH/ASPC/NMA/PCNA Guideline for the Prevention, Detection, Evaluation, and Management of High Blood Pressure in Adults: A Report of the American College of Cardiology/American Heart Association Task Force on Clinical Practice Guidelines

2017 ACC/AHA/AAPA/ABC/ACPM/AGS/APhA/ASH/ASPC/NMA/PCNA Guideline for the Prevention, Detection, Evaluation, and Management of High Blood Pressure in Adults: Executive Summary: A Report of the American College of Cardiology/American Heart Association Task Force on Clinical Practice Guidelines

Phylogenomic Analyses Support Traditional Relationships within Cnidaria

2017 ACC/AHA/AAPA/ABC/ACPM/AGS/APhA/ASH/ASPC/NMA/PCNA Guideline for the Prevention, Detection, Evaluation, and Management of High Blood Pressure in Adults: Executive Summary: A Report of the American College of Cardiology/American Heart Association Task Force on Clinical Practice Guidelines

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