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Applying Wavelet Packet Decomposition and One-Class Support Vector Machine on Vehicle Acceleration Traces for Road Anomaly Detection

Advances in Neural Networks – ISNN 2013, p.291-299

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Atomic Structure of Defects in GaN:Mg grown with Ga polarity

MRS proceedings, 2003, Vol.798, Article Y9.7

2003

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Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1636-1640

2006

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A causal effects of gut microbiota in the development of migraine

Journal of headache and pain, 2023-07, Vol.24 (1), p.90-90, Article 90

2023

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Causal relationships between migraine and microstructural white matter: a Mendelian randomization study

Journal of headache and pain, 2023-02, Vol.24 (1), p.10-10, Article 10

2023

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Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Journal of crystal growth, 2004-12, Vol.273 (1), p.118-128

2004

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Children developing self-regulation skills in a Kids' Skills intervention programme in Finnish Early Childhood Education and Care

Early child development and care, 2022-07, Vol.192 (10), p.1626-1642

2022

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Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Applied physics letters, 2003-05, Vol.82 (20), p.3457-3459

2003

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Designing culturally inclusive affordance networks into the curriculum

Teaching in higher education, 2015-02, Vol.20 (2), p.131-142

2015

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Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

Physical review. B, Condensed matter and materials physics, 2006-05, Vol.73 (19), Article 193301

2006

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Dissecting the shared genetic basis of migraine and mental disorders using novel statistical tools

Brain (London, England : 1878), 2022

2022

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Dissecting the shared genetic basis of migraine and mental disorders using novel statistical tools

Brain (London, England : 1878), 2022-03, Vol.145 (1), p.142-153

2022

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Dissociation of V Ga –O N complexes in HVPE GaN by high pressure and high temperature annealing

Physica status solidi. B, Basic research, 2006-06, Vol.243 (7), p.1436-1440

2006

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Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1436-1440

2006

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Dominant intrinsic acceptors in GaN and ZnO

Physica scripta, 2006-09, Vol.2006, p.105-109

2006

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Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

AIP conference proceedings, 2005, Vol.772, p.261-262

2005

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Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Journal of applied physics, 2005-08, Vol.98 (3), p.033508-033508-8

2005

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Effect of Reference Panel in ID Score Regression Analysis of Lipid Traits in the Finnish Population

Human heredity, 2018-06, Vol.83 (1), p.10

2018

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Electrical and optical properties of carbon-related defects in GaN

2003 International Symposium on Compound Semiconductors, 2003, p.57-58

2003

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Evaluating clinical mitochondrial respiratory chain enzymes from biopsy specimens presenting skewed probability distribution of activity data

Mitochondrion, 2016-07, Vol.29, p.53-58

2016

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Fill-in solution for the coverage hole in the indoor environment

Proceedings of the IEEE 6th Circuits and Systems Symposium on Emerging Technologies: Frontiers of Mobile and Wireless Communication (IEEE Cat. No.04EX710), 2004, Vol.1, p.169-172 Vol.1

2004

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The Finnish Press Club ». Théâtre documentaire journalistique et débat social

Communication & langages, 2016, Vol.190 (4), p.105-117

2016

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The Finnish Press Club ». Théâtre documentaire journalistique et débat social

Communication & langages, 2016-12, Vol.N° 190 (4), p.105-117

2016

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The Finnish Press Club ». Théâtre documentaire journalistique et débat social

Communication & langages, 2016-12, Vol.2016 (190), p.105-117

2016

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Gallium and nitrogen vacancies in GaN : Impurity decoration effects

Physica. B, Condensed matter, 2006, Vol.376-77, p.424-427

2006

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Applying Wavelet Packet Decomposition and One-Class Support Vector Machine on Vehicle Acceleration Traces for Road Anomaly Detection

Atomic Structure of Defects in GaN:Mg grown with Ga polarity

Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing

A causal effects of gut microbiota in the development of migraine

Causal relationships between migraine and microstructural white matter: a Mendelian randomization study

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Children developing self-regulation skills in a Kids' Skills intervention programme in Finnish Early Childhood Education and Care

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Designing culturally inclusive affordance networks into the curriculum

Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

Dissecting the shared genetic basis of migraine and mental disorders using novel statistical tools

Dissecting the shared genetic basis of migraine and mental disorders using novel statistical tools

Dissociation of V Ga –O N complexes in HVPE GaN by high pressure and high temperature annealing

Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing

Dominant intrinsic acceptors in GaN and ZnO

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Effect of Reference Panel in ID Score Regression Analysis of Lipid Traits in the Finnish Population

Electrical and optical properties of carbon-related defects in GaN

Evaluating clinical mitochondrial respiratory chain enzymes from biopsy specimens presenting skewed probability distribution of activity data

Fill-in solution for the coverage hole in the indoor environment

The Finnish Press Club ». Théâtre documentaire journalistique et débat social

The Finnish Press Club ». Théâtre documentaire journalistique et débat social

The Finnish Press Club ». Théâtre documentaire journalistique et débat social

Gallium and nitrogen vacancies in GaN : Impurity decoration effects

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