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Room-temperature polariton lasing in semiconductor microcavities

Physical review letters, 2007-03, Vol.98 (12), p.126405-126405, Article 126405

2007

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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6328-6344

2007

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Spontaneous polarization buildup in a room-temperature polariton laser

Physical review letters, 2008-09, Vol.101 (13), p.136409-136409, Article 136409

2008

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Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Low temperature p- type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Applied physics letters, 2014-12, Vol.105 (24)

2014

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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Journal of applied physics, 2009-12, Vol.106 (12), p.124503-124503-7

2009

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Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Physica Status Solidi (b), 2005-09, Vol.242 (11), p.2326-2344

2005

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Barrier-Layer Scaling of InAlN/GaN HEMTs

IEEE electron device letters, 2008-05, Vol.29 (5), p.422-425

2008

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Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition

Thin solid films, 2013-07, Vol.539, p.55-59

2013

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Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications

Applied physics letters, 2006-01, Vol.88 (5)

2006

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Broadband blue superluminescent light-emitting diodes based on GaN

Applied physics letters, 2009-08, Vol.95 (8), p.081107-081107-3

2009

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Generation of white LED light by frequency downconversion using perylene-based dye

Electronics letters, 2012-10, Vol.48 (22), p.1417-1419

2012

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Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

Applied physics letters, 2005-09, Vol.87 (11)

2005

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High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Applied physics letters, 2008-04, Vol.92 (17), p.171102-171102-3

2008

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Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (24), Article 245308

2012

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InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

IEEE electron device letters, 2009-11, Vol.30 (11), p.1131-1133

2009

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High doping level in Mg-doped GaN layers grown at low temperature

Journal of applied physics, 2008-01, Vol.103 (1), p.013110-013110-6

2008

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Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Journal of applied physics, 2003-11, Vol.94 (10), p.6499-6507

2003

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

IEEE electron device letters, 2009-08, Vol.30 (8), p.796-798

2009

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Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Applied physics letters, 2006-04, Vol.88 (15)

2006

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Impact of disorder on high quality factor III-V nitride microcavities

Applied physics letters, 2006-12, Vol.89 (26), p.261101-261101-3

2006

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High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

Applied physics letters, 2006-12, Vol.89 (23), p.232109-232109-3

2006

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Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2007-07, Vol.91 (4)

2007

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Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7207

2005

Volltextzugriff (PDF)

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Room-temperature polariton lasing in semiconductor microcavities

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Spontaneous polarization buildup in a room-temperature polariton laser

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Low temperature p- type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Barrier-Layer Scaling of InAlN/GaN HEMTs

Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition

Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications

Broadband blue superluminescent light-emitting diodes based on GaN

Generation of white LED light by frequency downconversion using perylene-based dye

Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

High doping level in Mg-doped GaN layers grown at low temperature

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Impact of disorder on high quality factor III-V nitride microcavities

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities

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