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Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

Applied physics letters, 2017-06, Vol.110 (26)

2017

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Full InGaN red light emitting diodes

Journal of applied physics, 2020-10, Vol.128 (13)

2020

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Direct Imaging of p–n Junction in Core–Shell GaN Wires

Nano letters, 2014-06, Vol.14 (6), p.3491-3498

2014

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Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

Nanotechnology, 2020-11, Vol.31 (47), p.475705-475705

2020

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Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells

Journal of applied physics, 2021-05, Vol.129 (17)

2021

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Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

Journal of crystal growth, 2020-03, Vol.533, p.125481, Article 125481

2020

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InGaN islands and thin films grown on epitaxial graphene

Nanotechnology, 2020-10, Vol.31 (40), p.405601-405601

2020

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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205424

2015

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AlGaN/GaN HEMT on (111) single crystalline diamond

Electronics letters, 2010, Vol.46 (4), p.299-301

2010

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Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Physical review. B, 2017-03, Vol.95 (12), p.125314, Article 125314

2017

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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Applied physics letters, 2013-11, Vol.103 (20), p.202101

2013

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Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate

Electronics letters, 2011-06, Vol.47 (13), p.765-767

2011

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Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

Physical review. B, 2016-11, Vol.94 (19), Article 195411

2016

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Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Physical review. B, Condensed matter and materials physics, 2008-02, Vol.77 (7), Article 075306

2008

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Exciton localization on basal stacking faults in a -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Journal of applied physics, 2009-02, Vol.105 (4), p.043102-043102-7

2009

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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11)

2006

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GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

Journal of crystal growth, 2009-10, Vol.311 (21), p.4539-4542

2009

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High doping level in Mg-doped GaN layers grown at low temperature

Journal of applied physics, 2008-01, Vol.103 (1), p.013110-013110-6

2008

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Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a -plane GaN

Applied physics letters, 2009-05, Vol.94 (20), p.201115-201115-3

2009

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Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Journal of applied physics, 2012-02, Vol.111 (3), p.033517-033517-10

2012

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Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Journal of applied physics, 2004-07, Vol.96 (1), p.180-185

2004

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Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

Applied physics letters, 2008-09, Vol.93 (10), p.101117-101117-3

2008

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Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Journal of applied physics, 2009-03, Vol.105 (6)

2009

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High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

Applied physics letters, 2003-01, Vol.82 (4), p.499-501

2003

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In surface segregation in InGaN/GaN quantum wells

Journal of crystal growth, 2003-04, Vol.251 (1), p.471-475

2003

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Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

Full InGaN red light emitting diodes

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells

Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

InGaN islands and thin films grown on epitaxial graphene

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

AlGaN/GaN HEMT on (111) single crystalline diamond

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Exciton localization on basal stacking faults in a -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

High doping level in Mg-doped GaN layers grown at low temperature

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a -plane GaN

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

In surface segregation in InGaN/GaN quantum wells

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