UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

Applied physics letters, 2019-12, Vol.115 (26)

2019

Volltextzugriff (PDF)

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Applied physics letters, 2015-04, Vol.106 (14)

2015

Volltextzugriff (PDF)

Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

Journal of physics. D, Applied physics, 2015-08, Vol.48 (32), p.325103-7

2015

Volltextzugriff (PDF)

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Applied physics letters, 2001-11, Vol.79 (20), p.3230-3232

2001

Volltextzugriff (PDF)

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

Applied physics letters, 2013-12, Vol.103 (24)

2013

Volltextzugriff (PDF)

Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates

Applied physics letters, 2014-09, Vol.105 (9)

2014

Volltextzugriff (PDF)

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Semiconductor science and technology, 2014-08, Vol.29 (8)

2014

Volltextzugriff (PDF)

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Journal of crystal growth, 2010-09, Vol.312 (19), p.2625-2630

2010

Volltextzugriff (PDF)

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Journal of crystal growth, 2012-08, Vol.353 (1), p.1-4

2012

Volltextzugriff (PDF)

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

Applied physics letters, 2022-04, Vol.120 (17)

2022

Volltextzugriff (PDF)

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Journal of applied physics, 2003-11, Vol.94 (10), p.6499-6507

2003

Volltextzugriff (PDF)

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120 , 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

Volltextzugriff (PDF)

Atomic structure of pyramidal defects in Mg-doped GaN

Physical review. B, Condensed matter, 2003-12, Vol.68 (23), Article 235214

2003

Volltextzugriff (PDF)

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

Volltextzugriff (PDF)

Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression

Journal of applied physics, 2019-01, Vol.125 (3)

2019

Volltextzugriff (PDF)

The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates

Journal of crystal growth, 2011-02, Vol.316 (1), p.30-36

2011

Volltextzugriff (PDF)

Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

Journal of applied physics, 2000-08, Vol.88 (3), p.1525-1534

2000

Volltextzugriff (PDF)

GaN quantum dot polarity determination by X-ray photoelectron diffraction

Applied surface science, 2016-12, Vol.389, p.1156-1160

2016

Volltextzugriff (PDF)

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

Applied physics letters, 2000-08, Vol.77 (6), p.880-882

2000

Volltextzugriff (PDF)

Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching

Applied physics letters, 2010-06, Vol.96 (23), p.231918-231918-3

2010

Volltextzugriff (PDF)

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.498-501

2014

Volltextzugriff (PDF)

Improved semipolar ( 11 2 ¯ 2 ) GaN quality using asymmetric lateral epitaxy

Applied physics letters, 2009-05, Vol.94 (19), p.191903-191903-3

2009

Volltextzugriff (PDF)

Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

Nanotechnology, 2017-09, Vol.28 (36), p.365704

2017

Volltextzugriff (PDF)

Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Journal of crystal growth, 2011-05, Vol.323 (1), p.161-163

2011

Volltextzugriff (PDF)

Whispering-gallery mode InGaN microdisks on GaN substrates

Optics express, 2021-07, Vol.29 (14), p.21280-21289

2021

Volltextzugriff (PDF)

1 – 25 von 123

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(102)
Mit Volltextzugriff
(100)

Publikationsform

Sprache

Englisch
(121)

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120 , 171103 (2022)]

Atomic structure of pyramidal defects in Mg-doped GaN

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression

The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates

Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

GaN quantum dot polarity determination by X-ray photoelectron diffraction

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

Semipolar GaN films on patterned r -plane sapphire obtained by wet chemical etching

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Improved semipolar ( 11 2 ¯ 2 ) GaN quality using asymmetric lateral epitaxy

Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Whispering-gallery mode InGaN microdisks on GaN substrates

Suchergebnisse filtern