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Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

Applied physics letters, 2019-08, Vol.115 (7)

2019

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Thick gate oxide extrinsic breakdown – The potential role of neutral hydrogen atom

Power electronic devices and components, 2023-03, Vol.4, p.100024, Article 100024

Cheung, Kin P

2023

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A non-defect precursor gate oxide breakdown model

Journal of applied physics, 2023-06, Vol.133 (23)

Cheung, Kin P.

2023

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On the “intrinsic” breakdown of thick gate oxide

Journal of applied physics, 2022-10, Vol.132 (14)

Cheung, Kin P.

2022

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Analysis and Control of RRAM Overshoot Current

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.108-114

2018

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Impact of RRAM Read Fluctuations on the Program-Verify Approach

IEEE electron device letters, 2017-06, Vol.38 (6), p.736-739

2017

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Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Micromachines (Basel), 2020-03, Vol.11 (4), p.364

2020

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Electron Spin Resonance Scanning Probe Spectroscopy for Ultrasensitive Biochemical Studies

Analytical chemistry (Washington), 2015-05, Vol.87 (9), p.4910-4916

2015

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A field-effect transistor-based room-temperature quantum current source

Applied physics letters, 2023-05, Vol.122 (18)

2023

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V-Ramp test and gate oxide screening under the "lucky" defect model

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

Cheung, Kin P

2023

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Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3605-3613

2016

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Local Field Effect on Charge-Capture/Emission Dynamics

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.5099-5106

2017

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Observation of strong reflection of electron waves exiting a ballistic channel at low energy

AIP advances, 2016-06, Vol.6 (6), p.065212-065212-9

2016

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Quantifying Short-Lived Events in Multistate Ionic Current Measurements

ACS nano, 2014-02, Vol.8 (2), p.1547-1553

2014

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Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection

Analytical chemistry (Washington), 2019-09, Vol.91 (17), p.11108-11115

2019

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Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis

Advanced functional materials, 2018-03, Vol.28 (10), p.n/a

2018

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Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

Materials Science Forum, 2016-05, Vol.858, p.615-618

2016

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Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature

Advanced functional materials, 2018-02, Vol.28 (8), p.n/a

2018

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Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Review of scientific instruments, 2019-01, Vol.90 (1)

2019

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Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.338-339

2022

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PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3613-3618

2014

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Rapid and Accurate C - V Measurements

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3851-3856

2016

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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2004-2012

2008

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Accurate Fast Capacitance Measurements for Reliable Device Characterization

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2509-2514

2014

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Correction to Quantifying Short-Lived Events in Multistate Ionic Channel Measurements

ACS nano, 2015-12, Vol.9 (12), p.12583-12583

2015

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Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

Thick gate oxide extrinsic breakdown – The potential role of neutral hydrogen atom

A non-defect precursor gate oxide breakdown model

On the “intrinsic” breakdown of thick gate oxide

Analysis and Control of RRAM Overshoot Current

Impact of RRAM Read Fluctuations on the Program-Verify Approach

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Electron Spin Resonance Scanning Probe Spectroscopy for Ultrasensitive Biochemical Studies

A field-effect transistor-based room-temperature quantum current source

V-Ramp test and gate oxide screening under the "lucky" defect model

Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

Local Field Effect on Charge-Capture/Emission Dynamics

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

Quantifying Short-Lived Events in Multistate Ionic Current Measurements

Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection

Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

Rapid and Accurate C - V Measurements

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques

Accurate Fast Capacitance Measurements for Reliable Device Characterization

Correction to Quantifying Short-Lived Events in Multistate Ionic Channel Measurements

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