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Review on Non-Volatile Memory with High -k Dielectrics: Flash for Generation Beyond 32 nm

Materials, 2014-07, Vol.7 (7), p.5117-5145

2014

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Silver Ink Formulations for Sinter-free Printing of Conductive Films

Scientific reports, 2016-02, Vol.6 (1), p.20814-20814, Article 20814

2016

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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Oxides for Rectenna Technology

Materials, 2021-09, Vol.14 (18), p.5218

2021

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Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC-DC converters

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.56505

2019

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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Journal of applied physics, 2019-07, Vol.126 (3)

2019

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.878-888

2011

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Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Materials, 2012-06, Vol.5 (6), p.1005-1032

2012

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The 2018 GaN power electronics roadmap

Journal of physics. D, Applied physics, 2018-04, Vol.51 (16), p.163001

2018

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Embedded fibre Bragg grating sensors in advanced composite materials

Composites science and technology, 2001-08, Vol.61 (10), p.1379-1387

2001

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Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

AIP advances, 2018-06, Vol.8 (6), p.065011-065011-7

2018

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Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

Materials, 2015-07, Vol.8 (8), p.4829-4842

2015

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Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Materials, 2015-12, Vol.8 (12), p.8169-8182

2015

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Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Materials, 2014-10, Vol.7 (10), p.6965-6981

2014

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Photochemical atomic layer deposition and etching

Surface & coatings technology, 2016-04, Vol.291, p.258-263

Chalker, P.R.

2016

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Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes

Inorganic chemistry, 2015-05, Vol.54 (10), p.4869-4881

2015

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Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

physica status solidi (b), 2024-05, Vol.261 (5), p.n/a

2024

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Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Journal of physics. D, Applied physics, 2019-11, Vol.52 (47)

2019

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Influence of Polymorphism on the Electronic Structure of Ga2O3

Chemistry of materials, 2020-10, Vol.32 (19), p.8460-8470

2020

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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer

Journal of crystal growth, 2007-10, Vol.308 (2), p.302-308

2007

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Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics

AIP advances, 2015-01, Vol.5 (1), p.017115-017115-7

2015

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Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Applied physics letters, 2023-02, Vol.122 (6)

2023

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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Journal of crystal growth, 2019-12, Vol.528, p.125254, Article 125254

2019

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Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.1

2020

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Review on Non-Volatile Memory with High -k Dielectrics: Flash for Generation Beyond 32 nm

Silver Ink Formulations for Sinter-free Printing of Conductive Films

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Oxides for Rectenna Technology

Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC-DC converters

Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

The 2018 GaN power electronics roadmap

Embedded fibre Bragg grating sensors in advanced composite materials

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Photochemical atomic layer deposition and etching

Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Influence of Polymorphism on the Electronic Structure of Ga2O3

Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer

Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics

Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric

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