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Surface photovoltage in undoped n -type GaN

Journal of applied physics, 2010-06, Vol.107 (11), p.113535-113535-13

2010

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Highly Efficient Electron Field Emission from Graphene Oxide Sheets Supported by Nickel Nanotip Arrays

Nano letters, 2012-03, Vol.12 (3), p.1265-1268

2012

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Photoadsorption and photodesorption for GaN

Applied physics letters, 2009-04, Vol.94 (16), p.162116-162116-3

2009

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Epitaxial lateral overgrowth of ( 11 2 ¯ 2 ) semipolar GaN on ( 1 1 ¯ 00 ) m -plane sapphire by metalorganic chemical vapor deposition

Applied physics letters, 2007-04, Vol.90 (18), p.182109-182109-3

2007

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Surface band bending of a -plane GaN studied by scanning Kelvin probe microscopy

Applied physics letters, 2006-03, Vol.88 (12), p.122104-122104-3

2006

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Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

Journal of applied physics, 2016-10, Vol.120 (15)

2016

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Nonpolar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Applied physics letters, 2009-09, Vol.95 (11), p.111102-111102-3

2009

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Temperature-dependent Kelvin probe measurements of band bending in p -type GaN

Applied physics letters, 2012-08, Vol.101 (8), p.82104

2012

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Study of SiNx and SiO2 passivation of GaN surfaces

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.726-729

2014

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Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth

Applied physics letters, 2006-12, Vol.89 (26)

2006

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Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Applied physics letters, 2004-05, Vol.84 (21), p.4150-4152

2004

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Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

Applied physics letters, 2009-09, Vol.95 (10)

2009

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A Stable High-Index Surface of Silicon: Si(5 5 12)

Science (American Association for the Advancement of Science), 1995-09, Vol.269 (5230), p.1556-1560

1995

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1-D nanostructures grown on the Si(5 5 12) surface

Applied surface science, 2001-10, Vol.182 (3), p.216-222

2001

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Growth of Self-Assembled n-Alkyltrichlorosilane Films on Si(100) Investigated by Atomic Force Microscopy

Langmuir, 1995-06, Vol.11 (6), p.2143-2150

1995

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The structure of silicon surfaces from (001) to (111)

Surface science, 1997-12, Vol.392 (1), p.69-85

1997

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Fabrication of Sol−Gel Materials with Anisotropic Physical Properties by Photo-Cross-Linking

Chemistry of materials, 2009-05, Vol.21 (10), p.2108-2114

2009

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Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Physica status solidi. C, 2013-03, Vol.10 (3), p.536-539

2013

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Observation of surface charging at the edge of a Schottky contact

IEEE electron device letters, 2006-04, Vol.27 (4), p.211-213

2006

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Surface charging and current collapse in an AlGaN ∕ GaN heterostructure field effect transistor

Applied physics letters, 2005-02, Vol.86 (8), p.083506-083506-3

2005

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Effects of polarity and surface treatment on Ga- and N-polar bulk GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-09, Vol.30 (5)

2012

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Study of leakage defects on GaN films by conductive atomic force microscopy

Journal of physics. Conference series, 2007-03, Vol.61 (1), p.90-94

2007

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Role of the surface in the electrical and optical properties of GaN

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4892-4895

2009

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Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Applied physics letters, 2001-06, Vol.78 (26), p.4145-4147

2001

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Surface photovoltage in undoped n -type GaN

Highly Efficient Electron Field Emission from Graphene Oxide Sheets Supported by Nickel Nanotip Arrays

Photoadsorption and photodesorption for GaN

Epitaxial lateral overgrowth of ( 11 2 ¯ 2 ) semipolar GaN on ( 1 1 ¯ 00 ) m -plane sapphire by metalorganic chemical vapor deposition

Surface band bending of a -plane GaN studied by scanning Kelvin probe microscopy

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

Nonpolar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Temperature-dependent Kelvin probe measurements of band bending in p -type GaN

Study of SiNx and SiO2 passivation of GaN surfaces

Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K

Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

A Stable High-Index Surface of Silicon: Si(5 5 12)

1-D nanostructures grown on the Si(5 5 12) surface

Growth of Self-Assembled n-Alkyltrichlorosilane Films on Si(100) Investigated by Atomic Force Microscopy

The structure of silicon surfaces from (001) to (111)

Fabrication of Sol−Gel Materials with Anisotropic Physical Properties by Photo-Cross-Linking

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Observation of surface charging at the edge of a Schottky contact

Surface charging and current collapse in an AlGaN ∕ GaN heterostructure field effect transistor

Effects of polarity and surface treatment on Ga- and N-polar bulk GaN

Study of leakage defects on GaN films by conductive atomic force microscopy

Role of the surface in the electrical and optical properties of GaN

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

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