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Cleaning of AlN and GaN surfaces

Journal of applied physics, 1998-11, Vol.84 (9), p.5248-5260

1998

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High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Applied physics letters, 1997-12, Vol.71 (25), p.3631-3633

1997

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Strain effects on excitonic transitions in GaN: Deformation potentials

Physical review. B, Condensed matter, 1996-11, Vol.54 (19), p.13460-13463

1996

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Strain-related phenomena in GaN thin films

Physical review. B, Condensed matter, 1996-12, Vol.54 (24), p.17745-17753

1996

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Evidence for localized Si-donor state and its metastable properties in AlGaN

Applied physics letters, 1999-06, Vol.74 (25), p.3833-3835

1999

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Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied physics letters, 1997-10, Vol.71 (16), p.2289-2291

1997

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Growth defects in GaN films on 6H–SiC substrates

Applied physics letters, 1996-05, Vol.68 (19), p.2678-2680

1996

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Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

Journal of electronic materials, 1997-03, Vol.26 (3), p.224-231

1997

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Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

Applied physics letters, 1996-09, Vol.69 (14), p.2065-2067

1996

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Optical characterization of wide bandgap semiconductors

Thin solid films, 2000-03, Vol.364 (1-2), p.98-106

2000

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A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies

Applied physics letters, 1996-10, Vol.69 (16), p.2379-2381

1996

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Intrinsic exciton transitions in GaN

Journal of applied physics, 1998-01, Vol.83 (1), p.455-461

1998

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Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition

Applied physics letters, 2001-02, Vol.78 (8), p.1062-1064

2001

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Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied physics letters, 1996-08, Vol.69 (6), p.740-742

1996

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Photoelectrochemical capacitance-voltage measurements in GaN

Journal of electronic materials, 1998-05, Vol.27 (5), p.L26-L28

1998

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Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

Journal of the European Ceramic Society, 1997, Vol.17 (15-16), p.1775-1779

1997

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Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma

Journal of electronic materials, 1997-03, Vol.26 (3), p.301-305

1997

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Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers

MRS proceedings, 1997, Vol.482, Article 301

1997

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Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Thin solid films, 1998-02, Vol.313 (1-2), p.187-192

1998

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UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

Applied surface science, 1996-09, Vol.104, p.455-460

1996

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Binding energy for the intrinsic excitons in wurtzite GaN

Physical review. B, Condensed matter, 1996-12, Vol.54 (23), p.16369-16372

1996

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Trends in residual stress for GaN/AlN/6H–SiC heterostructures

Applied physics letters, 1998-11, Vol.73 (19), p.2808-2810

1998

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GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary ® Reactors

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e38

1998

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Time-Resolved Photoluminescence in Strained GaN Layers

Physica status solidi. A, Applied research, 2001-01, Vol.183 (1), p.151-155

2001

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Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied physics letters, 1997-11, Vol.71 (18), p.2638-2640

1997

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Cleaning of AlN and GaN surfaces

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Strain effects on excitonic transitions in GaN: Deformation potentials

Strain-related phenomena in GaN thin films

Evidence for localized Si-donor state and its metastable properties in AlGaN

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Growth defects in GaN films on 6H–SiC substrates

Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

Optical characterization of wide bandgap semiconductors

A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies

Intrinsic exciton transitions in GaN

Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Photoelectrochemical capacitance-voltage measurements in GaN

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma

Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

Binding energy for the intrinsic excitons in wurtzite GaN

Trends in residual stress for GaN/AlN/6H–SiC heterostructures

GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary ® Reactors

Time-Resolved Photoluminescence in Strained GaN Layers

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

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