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Template synthesis and forming electrical contacts to single Au nanowires by focused ion beam techniques

Nanotechnology, 2006-02, Vol.17 (4), p.1134-1139

2006

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Synthesis of SiC Microstructures in Si Technology by High Dose Carbon Implantation: Etch‐Stop Properties

Journal of the Electrochemical Society, 1997-06, Vol.144 (6), p.2211-2215

1997

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Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

Journal of physics. Conference series, 2012-01, Vol.371 (1), p.12038-4

2012

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In situ and ex situ characterisation of thermally induced crystallisation of CuInS2 thin films for solar cell

Thin solid films, 2005-06, Vol.480-481 (Complete), p.362-366

2005

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Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Journal of non-crystalline solids, 2000-05, Vol.266, p.1279-1283

2000

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Effect of the nanostructure and surface chemistry on the gas adsorption properties of macroscopic multiwalled carbon nanotube ropes

Carbon (New York), 2007, Vol.45 (1), p.83-88

2007

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β-SiC on SiO2 formed by ion implantation and bonding for micromechanics applications

Sensors and actuators. A, Physical, 1999-04, Vol.74 (1-3), p.169-173

1999

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Polymorphism in CuInS2 epilayers: Origin of additional Raman modes

Applied physics letters, 2002-01, Vol.80 (4), p.562-564

2002

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Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

physica status solidi (b), 1999-01, Vol.211 (1), p.233-238

1999

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Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-01, Vol.147 (1-4), p.373-377

1999

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Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.401-406

2002

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TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.250-254

2000

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Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-01, Vol.19 (1), p.232-239

2001

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Detection of amines with chromium-doped WO(3) mesoporous material

Sensors and actuators. B, Chemical, 2009-07, Vol.140 (2), p.557-562

2009

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Influence on the gas sensor performances of the metal chemical states introduced by impregnation of calcinated SnO2 sol–gel nanocrystals

Sensors and actuators. B, Chemical, 2000-08, Vol.68 (1-3), p.94-99

2000

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Short-channel radiation effect in 60 MeV proton irradiated 0.13μm CMOS transistors

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2426-2432

2003

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Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon

Solid state phenomena, 1999-01, Vol.69-70, p.345-350

1999

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Photoexcited Individual Nanowires: Key Elements in Room Temperature Detection of Oxidizing Gases

AIP conference proceedings, 2009, Vol.1137 (1), p.400-402

2009

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Formaldehyde sensing mechanism of SnO2 nanowires grown on-chip by sputtering techniques

RSC advances, 2016-01

2016

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Self-Heating in Individual Nanowires: a Major Breakthrough in Sensors Technology

AIP conference proceedings, 2009, Vol.1137, p.127-129

2009

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Etch‐Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion Implantation into Silicon

Journal of the Electrochemical Society, 1996-03, Vol.143 (3), p.1026-1033

1996

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Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-01, Vol.36 (1-3), p.282-285

1996

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An array of ordered pillars with retentive properties for pressure-driven liquid chromatography fabricated directly from an unmodified cyclo olefin polymer

Lab on a chip, 2009-01, Vol.9 (11), p.1511-1516

2009

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Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

International journal of hydrogen energy, 2001-05, Vol.26 (5), p.483-488

2001

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Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy

Journal of applied physics, 1992-01, Vol.71 (2), p.898-906

1992

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Template synthesis and forming electrical contacts to single Au nanowires by focused ion beam techniques

Synthesis of SiC Microstructures in Si Technology by High Dose Carbon Implantation: Etch‐Stop Properties

Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

In situ and ex situ characterisation of thermally induced crystallisation of CuInS2 thin films for solar cell

Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Effect of the nanostructure and surface chemistry on the gas adsorption properties of macroscopic multiwalled carbon nanotube ropes

β-SiC on SiO2 formed by ion implantation and bonding for micromechanics applications

Polymorphism in CuInS2 epilayers: Origin of additional Raman modes

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates

TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Detection of amines with chromium-doped WO(3) mesoporous material

Influence on the gas sensor performances of the metal chemical states introduced by impregnation of calcinated SnO2 sol–gel nanocrystals

Short-channel radiation effect in 60 MeV proton irradiated 0.13μm CMOS transistors

Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon

Photoexcited Individual Nanowires: Key Elements in Room Temperature Detection of Oxidizing Gases

Formaldehyde sensing mechanism of SnO2 nanowires grown on-chip by sputtering techniques

Self-Heating in Individual Nanowires: a Major Breakthrough in Sensors Technology

Etch‐Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion Implantation into Silicon

Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon

An array of ordered pillars with retentive properties for pressure-driven liquid chromatography fabricated directly from an unmodified cyclo olefin polymer

Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy

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