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High resolution electron microscopy of CrN–TiN thin films grown on Si(100) by magnetron sputtering

Surface & coatings technology, 2006-06, Vol.200 (22), p.6201-6205

2006

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The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate

Journal of crystal growth, 2007-03, Vol.300 (2), p.368-373

2007

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Characterization of Si nanocrystals into SiO2 matrix

Applied surface science, 2006-10, Vol.253 (1), p.385-388

2006

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Microstructural investigation of 3C-SiC islands grown by VLS mechanism on 6H-SiC substrate

Journal of crystal growth, 2008-04, Vol.310 (7), p.1799-1803

2008

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Structural models for twin interfaces in Pd thin films

Journal of microscopy (Oxford), 2006-09, Vol.223 (3), p.208-211

2006

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Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates

Materials science forum, 2009-01, Vol.615-617, p.185-188

2009

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Phase transformation in CuAgSe: a DSC and electron diffraction examination

Journal of alloys and compounds, 2004-12, Vol.385 (1-2), p.169-172

2004

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Atomic models for the ErSi2/Si(111) interface

Physica status solidi. B. Basic research, 2003-10, Vol.239 (2), p.330-335

2003

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Structural and optical characterization of two-dimensional arrays of Si nanocrystals embedded in SiO 2 for photovoltaic applications

Journal of applied physics, 2012-04, Vol.111 (8), p.083536-083536-9

2012

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Effect of exciton migration on the light emission properties in silicon nanocrystal ensembles

Journal of applied physics, 2009-06, Vol.105 (11), p.113509-113509-7

2009

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High-resolution electron microscopy study of SiGeC thin films grown on Si(1 0 0) by laser-assisted techniques

Applied surface science, 2006-04, Vol.252 (13), p.4527-4530

2006

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8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

Materials science forum, 2009-01, Vol.615-617, p.339-342

2009

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Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

Materials science in semiconductor processing, 2019-03, Vol.91, p.159-166

2019

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Amorphization and defect recombination in ion implanted silicon carbide

Journal of applied physics, 1997-06, Vol.81 (11), p.7181-7185

1997

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Deposition of hydroxyapatite thin films by Nd:YAG laser ablation: a microstructural study

Materials research bulletin, 2004-11, Vol.39 (13), p.2089-2101

2004

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Electron microscopy characterization of TiN films on Si, grown by d.c. reactive magnetron sputtering

Thin solid films, 1995-11, Vol.268 (1), p.57-63

1995

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Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H–SiC semiconductor and Ni 1+ x Te 1 embedded nanodomains

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105003

2012

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The role of surface vibrations and quantum confinement effect to the optical properties of very thin nanocrystalline silicon films

Journal of applied physics, 2007-10, Vol.102 (8), p.083534-083534-4

2007

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Influence of grain size on ultrafast carrier dynamics in thin nanocrystalline silicon films

Applied physics letters, 2007-05, Vol.90 (19), p.191114-191114-3

2007

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High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1−x) alloys produced through laser induced processing

Applied physics letters, 1998-06, Vol.72 (22), p.2877-2879

1998

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Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction

Journal of crystal growth, 1997-02, Vol.172 (1), p.175-182

1997

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Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si1

Materials today : proceedings, 2016, Vol.3 (3), p.825-831

2016

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High crystalline quality erbium silicide films on (100) silicon, grown in high vacuum

Applied surface science, 1996-08, Vol.102, p.151-155

1996

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Study of the growth of inorganic and organic electrodes onto polyethylene terephthalate substrates

Thin solid films, 2009-12, Vol.518 (4), p.1124-1128

2009

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Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3×3) surface

Diamond and related materials, 1999-03, Vol.8 (2), p.352-356

1999

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High resolution electron microscopy of CrN–TiN thin films grown on Si(100) by magnetron sputtering

The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate

Characterization of Si nanocrystals into SiO2 matrix

Microstructural investigation of 3C-SiC islands grown by VLS mechanism on 6H-SiC substrate

Structural models for twin interfaces in Pd thin films

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates

Phase transformation in CuAgSe: a DSC and electron diffraction examination

Atomic models for the ErSi2/Si(111) interface

Structural and optical characterization of two-dimensional arrays of Si nanocrystals embedded in SiO 2 for photovoltaic applications

Effect of exciton migration on the light emission properties in silicon nanocrystal ensembles

High-resolution electron microscopy study of SiGeC thin films grown on Si(1 0 0) by laser-assisted techniques

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

Amorphization and defect recombination in ion implanted silicon carbide

Deposition of hydroxyapatite thin films by Nd:YAG laser ablation: a microstructural study

Electron microscopy characterization of TiN films on Si, grown by d.c. reactive magnetron sputtering

Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H–SiC semiconductor and Ni 1+ x Te 1 embedded nanodomains

The role of surface vibrations and quantum confinement effect to the optical properties of very thin nanocrystalline silicon films

Influence of grain size on ultrafast carrier dynamics in thin nanocrystalline silicon films

High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1−x) alloys produced through laser induced processing

Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction

Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si1

High crystalline quality erbium silicide films on (100) silicon, grown in high vacuum

Study of the growth of inorganic and organic electrodes onto polyethylene terephthalate substrates

Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3×3) surface

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