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Ultrafast transient spectroscopy and photoluminescence properties of V2O5 nanowires

Applied physics letters, 2013-09, Vol.103 (13)

2013

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Solid-state sensors for trace hydrogen gas detection

Journal of applied physics, 1990-09, Vol.68 (6), p.R1-R30

1990

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Carrier dynamics in β-Ga2O3 nanowires

Journal of applied physics, 2010-12, Vol.108 (12)

2010

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Linear correlation between binding energy and Young's modulus in graphene nanoribbons

Journal of applied physics, 2009-09, Vol.106 (5), p.054318-054318-5

2009

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Spatial dependence of ultrafast carrier recombination centers of phosphorus-implanted and annealed silicon wafers

Applied physics letters, 2002-07, Vol.81 (5), p.856-858

2002

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Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires

Nanoscale research letters, 2015-07, Vol.10 (1), Article 304

2015

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Ultrafast Spectroscopy and Red Emission from β-Ga2O 3/β-Ga 2S 3 Nanowires

Nanoscale research letters, 2015-12, Vol.10 (1), p.1016-1016

2015

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Ultrafast Spectroscopy and Red Emission from [beta]-Ga^sub 2^O3/[beta]-Ga^sub 2^S^sub 3^ Nanowires

Nanoscale research letters, 2015-07, Vol.10 (1), p.1

2015

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A systematic investigation into the conversion of β -Ga 2 O 3 to GaN nanowires using NH 3 and H 2 : Effects on the photoluminescence properties

Journal of applied physics, 2010-12, Vol.108 (12), p.124319-124319-8

2010

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Carrier dynamics in β -Ga 2 O 3 nanowires

Journal of applied physics, 2010-12, Vol.108 (12), p.124302-124302-6

2010

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A systematic investigation into the conversion of β-Ga2O3 to GaN nanowires using NH3 and H2: Effects on the photoluminescence properties

Journal of applied physics, 2010-12, Vol.108 (12)

2010

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Photophysics of PbS Quantum Dot Films Capped with Arsenic Sulfide Ligands

Advanced energy materials, 2014-05, Vol.4 (7), p.np-n/a

2014

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Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry

Journal of applied physics, 2006-06, Vol.99 (12)

2006

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Photothermal hydrogen sensor: the technique, experimental process, and physicochemical analysis

Applied physics. A, Materials science & processing, 2008-08, Vol.92 (3), p.651-658

2008

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Influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory

Journal of applied physics, 2002-08, Vol.92 (3), p.1280-1285

2002

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The role of surface vibrations and quantum confinement effect to the optical properties of very thin nanocrystalline silicon films

Journal of applied physics, 2007-10, Vol.102 (8), p.083534-083534-4

2007

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Study of the annealing kinetic effect and implantation energyon phosphorus-implanted silicon wafers using spectroscopic ellipsometry

Journal of applied physics, 2006-06, Vol.99 (12), p.123514-123514-6

2006

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Optical and structural properties of implanted Si wafers: the effects of implantation energy and subsequent isochronal annealing temperature

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1059-1063

2006

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Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion-implanted and amorphous thin layers

Journal of applied physics, 1990-03, Vol.67 (6), p.2822-2830

1990

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Photothermal electrostatics of the Pd-polyvinylidene fluoride photopyroelectric hydrogen gas sensor

Journal of applied physics, 1991-10, Vol.70 (8), p.4496-4504

1991

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Operating characteristics and comparison of photopyroelectric and piezoelectric sensors for trace hydrogen gas detection. II: Piezoelectric quartz-crystal microbalance sensor

Journal of applied physics, , Vol.66 (9), p.3986-3992

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Operating characteristics and comparison of photopyroelectric and piezoelectric sensors for trace hydrogen gas detection. I: Development of a new photopyroelectric sensor

Journal of applied physics, , Vol.66 (9), p.3975-3985

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Photopyroelectric (P 2E) sensor for trace hydrogen gas detection

Sensors and actuators. B, Chemical, 1990-03, Vol.2 (1), p.79-87

1990

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Photomodulated thermoreflectance detection of hydrogen at elevated temperatures: a detection limit

Applied physics letters, 2003-02, Vol.82 (6), p.904-906

2003

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Spectroscopic ellipsometry as a tool for the optical characterization and ageing studies of varnishes used in Post-Byzantine icon reconstructions

Journal of cultural heritage, 2006, Vol.7 (1), p.30-36

2006

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Ultrafast transient spectroscopy and photoluminescence properties of V2O5 nanowires

Solid-state sensors for trace hydrogen gas detection

Carrier dynamics in β-Ga2O3 nanowires

Linear correlation between binding energy and Young's modulus in graphene nanoribbons

Spatial dependence of ultrafast carrier recombination centers of phosphorus-implanted and annealed silicon wafers

Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires

Ultrafast Spectroscopy and Red Emission from β-Ga2O 3/β-Ga 2S 3 Nanowires

Ultrafast Spectroscopy and Red Emission from [beta]-Ga^sub 2^O3/[beta]-Ga^sub 2^S^sub 3^ Nanowires

A systematic investigation into the conversion of β -Ga 2 O 3 to GaN nanowires using NH 3 and H 2 : Effects on the photoluminescence properties

Carrier dynamics in β -Ga 2 O 3 nanowires

A systematic investigation into the conversion of β-Ga2O3 to GaN nanowires using NH3 and H2: Effects on the photoluminescence properties

Photophysics of PbS Quantum Dot Films Capped with Arsenic Sulfide Ligands

Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry

Photothermal hydrogen sensor: the technique, experimental process, and physicochemical analysis

Influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory

The role of surface vibrations and quantum confinement effect to the optical properties of very thin nanocrystalline silicon films

Study of the annealing kinetic effect and implantation energyon phosphorus-implanted silicon wafers using spectroscopic ellipsometry

Optical and structural properties of implanted Si wafers: the effects of implantation energy and subsequent isochronal annealing temperature

Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion-implanted and amorphous thin layers

Photothermal electrostatics of the Pd-polyvinylidene fluoride photopyroelectric hydrogen gas sensor

Operating characteristics and comparison of photopyroelectric and piezoelectric sensors for trace hydrogen gas detection. II: Piezoelectric quartz-crystal microbalance sensor

Operating characteristics and comparison of photopyroelectric and piezoelectric sensors for trace hydrogen gas detection. I: Development of a new photopyroelectric sensor

Photopyroelectric (P 2E) sensor for trace hydrogen gas detection

Photomodulated thermoreflectance detection of hydrogen at elevated temperatures: a detection limit

Spectroscopic ellipsometry as a tool for the optical characterization and ageing studies of varnishes used in Post-Byzantine icon reconstructions

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