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Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

Semiconductor science and technology, 2018-09, Vol.33 (9), p.94006

2018

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Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Semiconductor science and technology, 2020-02, Vol.35 (2), p.25024

2020

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Selective lateral etching of InAs GaSb tunnel junctions for mid-infrared photonics

Semiconductor science and technology, 2012-08, Vol.27 (8), p.85011

2012

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Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline

Applied energy, 2013-02, Vol.102, p.44-54

2013

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Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

Electronics letters, 2009, Vol.45 (25), p.1320

2009

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GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature

IEEE photonics technology letters, 2010-04, Vol.22 (8), p.553-555

2010

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IEEE_Xplore

Semiconductor Lasers: Fundamentals and Applications

Alexei Baranov, Eric Tournié

1, 2013

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ZnSe-based Schottky barrier photodetectors

Electronics letters, 2000-02, Vol.36 (4), p.352-354

2000

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Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 μm

Solid-state electronics, 2003-03, Vol.47 (3), p.477-482

2003

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Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 μm

Electronics letters, 2009-02, Vol.45 (5), p.265-267

2009

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Recombination channels in 2.4―3.2 μm GaInAsSb quantum-well lasers

Semiconductor science and technology, 2013, Vol.28 (1)

2013

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Effect of nitrogen on the band structure and material gain of InyGa1-yAs1-xNx-GaAs quantum wells

IEEE journal of selected topics in quantum electronics, 2003-05, Vol.9 (3), p.716-722

2003

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S20 photocathodes grown by molecular-beam deposition

Electronics letters, 2008, Vol.44 (4), p.315-316

2008

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High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched tunnel-junction apertures

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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IEEE_Xplore

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1047-1052

2006

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Silicon-on-insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm

CLEO: 2013, 2013, p.1-2

2013

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IEEE_Xplore

Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

IEEE journal of quantum electronics, 2001-09, Vol.37 (9), p.1146-1152

2001

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IEEE_Xplore

Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

IEEE photonics technology letters, 2011-12, Vol.23 (23), p.1760-1762

2011

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IEEE_Xplore

LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys

Solid-state electronics, 2003-03, Vol.47 (3), p.455-460

2003

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Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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IEEE_Xplore

Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties

Journal of electronic materials, 2000-06, Vol.29 (6), p.883-886

2000

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New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

Journal of electronic materials, 1999-06, Vol.28 (6), p.662-665

1999

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Investigations of InSb-based quantum dots grown by molecular-beam epitaxy

Physica status solidi. C, 2007-04, Vol.4 (5), p.1743-1746

2007

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GaInAsSb/GaSb pn photodiodes for detection to 2.4μm

Electronics letters, 1991, Vol.27 (14), p.1237-1239

1991

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III-V/Silicon Photonics for Short-Wave Infrared Spectroscopy

IEEE journal of quantum electronics, 2012-02, Vol.48 (2), p.292-298

2012

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IEEE_Xplore

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Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Selective lateral etching of InAs GaSb tunnel junctions for mid-infrared photonics

Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline

Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature

Semiconductor Lasers: Fundamentals and Applications

ZnSe-based Schottky barrier photodetectors

Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 μm

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 μm

Recombination channels in 2.4―3.2 μm GaInAsSb quantum-well lasers

Effect of nitrogen on the band structure and material gain of InyGa1-yAs1-xNx-GaAs quantum wells

S20 photocathodes grown by molecular-beam deposition

High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched tunnel-junction apertures

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm

Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys

Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications

Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties

New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

Investigations of InSb-based quantum dots grown by molecular-beam epitaxy

GaInAsSb/GaSb pn photodiodes for detection to 2.4μm

III-V/Silicon Photonics for Short-Wave Infrared Spectroscopy

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