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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1739-1744

2009

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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1912-1916

2009

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MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

Journal of crystal growth, 2009-03, Vol.311 (7), p.1905-1907

2009

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Interface analysis of InAs/GaSb superlattice grown by MBE

Journal of crystal growth, 2007-04, Vol.301, p.889-892

2007

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Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm

Journal of crystal growth, 2007-04, Vol.301, p.967-970

2007

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Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

Journal of crystal growth, 2003-04, Vol.251 (1), p.383-387

2003

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Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers

Journal of crystal growth, 1998-08, Vol.192 (1), p.102-108

1998

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Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures

Journal of crystal growth, 1995, Vol.150 (1-4), p.460-466

1995

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Interplay between Surface Stabilization, Growth Mode and Strain Relaxation during Molecular-Beam Epitaxy of Highly Mismatched III-V Semiconductor Layers

Europhysics letters, 1994-03, Vol.25 (9), p.663-668

1994

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Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

Journal of crystal growth, 2001-03, Vol.223 (4), p.461-465

2001

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Simulations of ZnSe/GaAs heteroepitaxial growth

Journal of crystal growth, 1997-07, Vol.178 (3), p.258-267

1997

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Defect control during growth of highly mismatched (100) InAs/GaAs-heterostructures

Journal of crystal growth, 1995, Vol.146 (1-4), p.368-373

1995

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Double period RHEED oscillations during MBE growth of GaAs and AlAs on the GaAs(110) surface

Surface science, 1995-07, Vol.331-333, p.479-484

1995

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New results and trends in the solid phase recrystallization of ZnSe

Materials letters, 1998-07, Vol.36 (1-4), p.162-166

1998

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Defect control in highly mismatched III-V semiconductor heterostructures through virtual-surfactant-mediated molecular beam epitaxy

Physica status solidi. A, Applied research, 1994-11, Vol.146 (1), p.353-370

1994

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Overlayer strain : a key to directly tune the topography of high-index semiconductor surfaces

Applied physics letters, 1993-12, Vol.63 (24), p.3300-3302

1993

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Surface stoichiometry, epitaxial morphology and strain relaxation during molecular beam epitaxy of highly strained InAs/Ga0.47In0.53As heterostructurse

Journal of crystal growth, 1994, Vol.135 (1-2), p.97-112

1994

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Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures: Properties and preparation of emerging device heterostructures

Thin solid films, 1993, Vol.231 (1-2), p.43-60

1993

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Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(0 0 1) and GaAs(0 0 1)

Journal of crystal growth, 2000, Vol.214-15, p.95-99

2000

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Molecular-beam epitaxy of BeTe layers on GaAs substrates

Journal of crystal growth, 1999, Vol.201202, p.494-497

1999

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Hetero-epitaxial growth of BexZn1-xSe on Si(0 0 1) and GaAs(0 0 1) substrates

Journal of crystal growth, 1998, Vol.184-85, p.11-15

1998

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Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

Journal of crystal growth, 1999, Vol.201202, p.498-501

1999

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Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(0 0 1) substrates

Journal of crystal growth, 1999, Vol.201202, p.514-517

1999

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ZnSe homoepitaxial growth on solid-phase recrystallized substrates

Journal of crystal growth, 1997, Vol.175-76, p.577-582

1997

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New results on the solid-phase recrystallisation of ZnSe

Journal of crystal growth, 1998, Vol.184-85, p.1021-1025

1998

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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

Interface analysis of InAs/GaSb superlattice grown by MBE

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm

Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers

Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures

Interplay between Surface Stabilization, Growth Mode and Strain Relaxation during Molecular-Beam Epitaxy of Highly Mismatched III-V Semiconductor Layers

Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

Simulations of ZnSe/GaAs heteroepitaxial growth

Defect control during growth of highly mismatched (100) InAs/GaAs-heterostructures

Double period RHEED oscillations during MBE growth of GaAs and AlAs on the GaAs(110) surface

New results and trends in the solid phase recrystallization of ZnSe

Defect control in highly mismatched III-V semiconductor heterostructures through virtual-surfactant-mediated molecular beam epitaxy

Overlayer strain : a key to directly tune the topography of high-index semiconductor surfaces

Surface stoichiometry, epitaxial morphology and strain relaxation during molecular beam epitaxy of highly strained InAs/Ga0.47In0.53As heterostructurse

Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures: Properties and preparation of emerging device heterostructures

Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(0 0 1) and GaAs(0 0 1)

Molecular-beam epitaxy of BeTe layers on GaAs substrates

Hetero-epitaxial growth of BexZn1-xSe on Si(0 0 1) and GaAs(0 0 1) substrates

Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(0 0 1) substrates

ZnSe homoepitaxial growth on solid-phase recrystallized substrates

New results on the solid-phase recrystallisation of ZnSe

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