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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Applied physics express, 2013-09, Vol.6 (9), p.92103

2013

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Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Journal of crystal growth, 2020-06, Vol.540, p.125644, Article 125644

2020

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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The influence of point defects on the thermal conductivity of AlN crystals

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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Thermal conductivity of single-crystalline AlN

Applied physics express, 2018-07, Vol.11 (7), p.71001

2018

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Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Applied physics express, 2015-06, Vol.8 (6), p.61003

2015

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Russia's Passportization Policy toward Unrecognized Republics: Abkhazia, South Ossetia, and Transnistria

Problems of post-communism, 2019-05, Vol.66 (3), p.186-199

Nagashima, Toru

2019

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Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of crystal growth, 2016-07, Vol.446, p.33-38

2016

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Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Applied physics express, 2012-12, Vol.5 (12), p.125501

2012

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Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Journal of crystal growth, 2010-09, Vol.312 (18), p.2530-2536

2010

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The Origin of Polycrystalline AlN Formation in Single Crystal AlN Substrate Grown by Hydride Vapor Phase Epitaxy

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(2), pp.47-2-06

2020

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Characterization of AlN single crystal fabricated by a novel growth technique, “pyrolytic transportation method”

Journal of crystal growth, 2010-09, Vol.312 (18), p.2527-2529

2010

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Relationship between Formation Conditions, Properties, and Crystallite Size of Boehmite

Journal of colloid and interface science, 2002-09, Vol.253 (2), p.308-314

2002

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Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

Journal of crystal growth, 2012-07, Vol.350 (1), p.75-79

2012

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Vacancy defects in UV-transparent HVPE-AlN

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.405-407

2014

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Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Applied physics express, 2012-05, Vol.5 (5), p.55504

2012

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Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Applied physics express, 2022-11, Vol.15 (11), p.115501

2022

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Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Applied physics express, 2012-12, Vol.5 (12), p.122101

2012

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Object classification integrating results of each scan line with low‐resolution LIDAR

IEEJ transactions on electrical and electronic engineering, 2019-08, Vol.14 (8), p.1203-1208

2019

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Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes

Solid state phenomena, 2023-08, Vol.346, p.325-330

2023

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Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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Femtosecond Laser Slicing of Single Crystal AlN Layer Grown by Hydride Vapor Phase Epitaxy on an AlN Substrate Generated by Physical Vapor Transport

Journal of laser micro nanoengineering, 2024-02, Vol.19 (1), p.63-66

2024

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Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S444-S446

2009

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

On the origin of the 265 nm absorption band in AlN bulk crystals

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

The influence of point defects on the thermal conductivity of AlN crystals

Thermal conductivity of single-crystalline AlN

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Russia's Passportization Policy toward Unrecognized Republics: Abkhazia, South Ossetia, and Transnistria

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

The Origin of Polycrystalline AlN Formation in Single Crystal AlN Substrate Grown by Hydride Vapor Phase Epitaxy

Characterization of AlN single crystal fabricated by a novel growth technique, “pyrolytic transportation method”

Relationship between Formation Conditions, Properties, and Crystallite Size of Boehmite

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

Vacancy defects in UV-transparent HVPE-AlN

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Object classification integrating results of each scan line with low‐resolution LIDAR

Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Femtosecond Laser Slicing of Single Crystal AlN Layer Grown by Hydride Vapor Phase Epitaxy on an AlN Substrate Generated by Physical Vapor Transport

Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy

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