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Lasing in strained germanium microbridges

Nature communications, 2019-06, Vol.10 (1), p.2724-8, Article 2724

2019

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1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Non-local electrical spin injection and detection in germanium at room temperature

Applied physics letters, 2017-10, Vol.111 (18)

2017

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Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress

Journal of applied physics, 2017-02, Vol.121 (5)

2017

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Accurate strain measurements in highly strained Ge microbridges

Applied physics letters, 2016-06, Vol.108 (24)

2016

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Germanium based photonic components toward a full silicon/germanium photonic platform

Progress in crystal growth and characterization of materials, 2017-06, Vol.63 (2), p.1-24

2017

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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Applied surface science, 2020-10, Vol.528, p.146998, Article 146998

2020

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Electrical spin injection in silicon and the role of defects

Physical review. B, 2016-11, Vol.94 (17), Article 174426

2016

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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

Diamond and related materials, 2022-06, Vol.126, p.109085, Article 109085

2022

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Spin transport in p-type germanium

Journal of physics. Condensed matter, 2016-04, Vol.28 (16), p.165801-165801

2016

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Spin-to-charge conversion for hot photoexcited electrons in germanium

Physical review. B, 2018-03, Vol.97 (12), Article 125203

2018

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Engineered SiC materials for power technologies

2022 International Conference on IC Design and Technology (ICICDT), 2022, p.55-56

2022

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3DVLSI with CoolCube process: An alternative path to scaling

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T48-T49

2015

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Experimental evaluation of gate architecture influence on DG SOI MOSFETs performance

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1772-1779

2005

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Multiple gate devices: advantages and challenges

Microelectronic engineering, 2005-06, Vol.80, p.378-385

2005

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Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

MRS communications, 2017-09, Vol.7 (3), p.691-694

2017

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Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body

Microelectronics and reliability, 2012-11, Vol.52 (11), p.2602-2608

2012

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Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

Microelectronic engineering, 2011-07, Vol.88 (7), p.1265-1268

2011

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Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

Solid-state electronics, 2007-11, Vol.51 (11), p.1494-1499

2007

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Multigate silicon MOSFETs for 45 nm node and beyond

Solid-state electronics, 2006, Vol.50 (1), p.18-23

2006

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Evaluation of crystal quality and dopant activation of Smart Cut™- transferred 4H-SiC thin film

Materials science forum, 2023, Vol.1089, p.71-79

2023

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Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS With Interlayer Contacts

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4503-4509

2017

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150 mm SiC Engineered Substrates for High-Voltage Power Devices

Materials science forum, 2022-05, Vol.1062, p.131-135

2022

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Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ andbiaxial (001) stress

Journal of applied physics, 2017-02, Vol.121 (5)

2017

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Steady state lasing in strained germanium microbridges as fundamental measure for the crossover to direct band gap

2021 IEEE 17th International Conference on Group IV Photonics (GFP), 2021, p.1-2

2021

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Lasing in strained germanium microbridges

1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

Non-local electrical spin injection and detection in germanium at room temperature

Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress

Accurate strain measurements in highly strained Ge microbridges

Germanium based photonic components toward a full silicon/germanium photonic platform

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Electrical spin injection in silicon and the role of defects

Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

Spin transport in p-type germanium

Spin-to-charge conversion for hot photoexcited electrons in germanium

Engineered SiC materials for power technologies

3DVLSI with CoolCube process: An alternative path to scaling

Experimental evaluation of gate architecture influence on DG SOI MOSFETs performance

Multiple gate devices: advantages and challenges

Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body

Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

Multigate silicon MOSFETs for 45 nm node and beyond

Evaluation of crystal quality and dopant activation of Smart Cut™- transferred 4H-SiC thin film

Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS With Interlayer Contacts

150 mm SiC Engineered Substrates for High-Voltage Power Devices

Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ andbiaxial (001) stress

Steady state lasing in strained germanium microbridges as fundamental measure for the crossover to direct band gap

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