UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Advanced Electron Microscopy for III/V on Silicon Integration

Advanced materials interfaces, 2019-06, Vol.6 (12), p.n/a

2019

Volltextzugriff (PDF)

GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Journal of crystal growth, 2011-01, Vol.315 (1), p.37-47

2011

Volltextzugriff (PDF)

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Nano letters, 2021-03, Vol.21 (5), p.2018-2025

2021

Volltextzugriff (PDF)

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon

Chemistry of materials, 2016-05, Vol.28 (10), p.3265-3275

2016

Volltextzugriff (PDF)

Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder

Advanced materials interfaces, 2023-06, Vol.10 (17), p.n/a

2023

Volltextzugriff (PDF)

Tailoring the diameter of electrospun layered perovskite nanofibers for photocatalytic water splitting

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (5), p.1971-1978

2018

Volltextzugriff (PDF)

Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Journal of crystal growth, 2016-01, Vol.433, p.89-96

2016

Volltextzugriff (PDF)

Probing the Interface Evolution in Co‐sintered All‐Phosphate Cathode‐Solid Electrolyte Composites

Advanced materials interfaces, 2023-12, Vol.10 (35), p.n/a

2023

Volltextzugriff (PDF)

A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures

Advanced materials interfaces, 2024-08, Vol.11 (23), p.n/a

2024

Volltextzugriff (PDF)

Synthesis and Characterization of Colloidal Fluorescent Silver Nanoclusters

Langmuir, 2012-06, Vol.28 (24), p.8915-8919

2012

Volltextzugriff (PDF)

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Applied materials today, 2017-03, Vol.6, p.22-28

2017

Volltextzugriff (PDF)

Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling

Matter, 2021-12, Vol.4 (12), p.3953-3966

2021

Volltextzugriff (PDF)

Influence of the sintering temperature on LLZO-NCM cathode composites for solid-state batteries studied by transmission electron microscopy

Matter, 2023-07, Vol.6 (7), p.2324-2339

2023

Volltextzugriff (PDF)

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Journal of crystal growth, 2017-04, Vol.464, p.2-7

2017

Volltextzugriff (PDF)

The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni 1- x - y Co x Mn y )O 2 Cathode Materials

ACS nano, 2019-09, Vol.13 (9), p.10694-10704

2019

Volltextzugriff (PDF)

In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases

Microscopy and microanalysis, 2017-08, Vol.23 (4), p.751-757

2017

Volltextzugriff (PDF)

Self-catalyzed GaP nanowire MOVPE growth on Si

Journal of crystal growth, 2023-05, Vol.609, p.127138, Article 127138

2023

Volltextzugriff (PDF)

Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material

Advanced energy materials, 2020-07, Vol.10 (25), p.n/a

2020

Volltextzugriff (PDF)

Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation

Microscopy and microanalysis, 2016-06, Vol.22 (3), p.515-519

2016

Volltextzugriff (PDF)

In Situ Monitoring of Thermally Induced Effects in Nickel-Rich Layered Oxide Cathode Materials at the Atomic Level

ACS applied materials & interfaces, 2020-12, Vol.12 (51), p.57047-57054

2020

Volltextzugriff (PDF)

Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

IEEE journal of photovoltaics, 2018-11, Vol.8 (6), p.1590-1595

2018

Volltextzugriff (PDF)

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Journal of crystal growth, 2022-03, Vol.582, p.126501, Article 126501

2022

Volltextzugriff (PDF)

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si

Microscopy and microanalysis, 2016-02, Vol.22 (1), p.131-139

2016

Volltextzugriff (PDF)

AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC

Crystal growth & design, 2022-11, Vol.22 (11), p.6786-6791

2022

Volltextzugriff (PDF)

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In x Ga1–x N

ACS applied materials & interfaces, 2023-08, Vol.15 (33), p.39513-39522

2023

Volltextzugriff (PDF)

1 – 25 von 274

Suche als RSS-Feed

Aktive Filter

SpracheLitauisch

PublikationsformNewsletter-Artikel

ThemaMaterials Science, Multidisciplinary

ThemaTechnology

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(263)
Mit Volltextzugriff
(251)

Publikationsform

Sprache

Englisch
(274)
Japanisch
(45)

Erscheinungsjahr

n.n

Thema

Materials Science
(274)
Science & Technology
(274)
Physical Sciences
(198)
Physics
(147)
Physics, Applied
(134)
Chemistry
(110)
Nanoscience & Nanotechnology
(80)
Science & Technology - Other Topics
(80)
Chemistry, Physical
(77)
Chemistry, Multidisciplinary
(67)
Physics, Condensed Matter
(59)
Engineering
(30)
Energy & Fuels
(28)
Optics
(23)
Thin Films
(22)
Exact Sciences And Technology
(21)
Solar Cells
(20)
Photovoltaic Cells
(19)

13 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Advanced Electron Microscopy for III/V on Silicon Integration

GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon

Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holder

Tailoring the diameter of electrospun layered perovskite nanofibers for photocatalytic water splitting

Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Probing the Interface Evolution in Co‐sintered All‐Phosphate Cathode‐Solid Electrolyte Composites

A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures

Synthesis and Characterization of Colloidal Fluorescent Silver Nanoclusters

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling

Influence of the sintering temperature on LLZO-NCM cathode composites for solid-state batteries studied by transmission electron microscopy

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni 1- x - y Co x Mn y )O 2 Cathode Materials

In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases

Self-catalyzed GaP nanowire MOVPE growth on Si

Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material

Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation

In Situ Monitoring of Thermally Induced Effects in Nickel-Rich Layered Oxide Cathode Materials at the Atomic Level

Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si

AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In x Ga1–x N

Aktive Filter

Suchergebnisse filtern