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A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Microelectronic engineering, 2015-11, Vol.147, p.72-74

2015

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Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors

Microelectronic engineering, 2013-09, Vol.109, p.101-104

2013

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Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators

Microelectronic engineering, 2016-06, Vol.159, p.9-16

2016

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Hot carrier effects in n-MOSFETs with SiO 2/HfO 2/HfSiO gate stack and TaN metal gate

Microelectronic engineering, 2009, Vol.86 (1), p.1-3

Crupi, Isodiana

2009

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From defects creation to circuit reliability – A bottom-up approach (invited)

Microelectronic engineering, 2011-07, Vol.88 (7), p.1396-1407

2011

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A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Microelectronic engineering, 2013-03, Vol.103, p.144-149

2013

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Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Microelectronic engineering, 2010, Vol.87 (1), p.47-50

2010

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Impact of increased resistive losses of metal interconnects upon ULSI devices reliability and functionality

Microelectronic engineering, 2012-04, Vol.92, p.119-122

2012

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Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs

Microelectronic engineering, 2010-10, Vol.87 (10), p.1963-1967

2010

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Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

Microelectronic engineering, 2009, Vol.86 (1), p.1-3

CRUPI, Isodiana

2009

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Comparison of La-based high- k dielectrics: HfLaSiON and HfLaON

Microelectronic engineering, 2009-03, Vol.86 (3), p.268-271

2009

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CHC degradation of strained devices based on SiON and high- k gate dielectric materials

Microelectronic engineering, 2011-07, Vol.88 (7), p.1408-1411

2011

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Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

Microelectronic engineering, 2007-09, Vol.84 (9), p.2081-2084

2007

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Hot-carrier damage from high to low voltage using the energy-driven framework

Microelectronic engineering, 2007-09, Vol.84 (9), p.1938-1942

2007

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Nature and location of interface traps in RF LDMOS due to hot carriers

Microelectronic engineering, 2004-04, Vol.72 (1), p.71-75

2004

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Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

Microelectronic engineering, 2009-07, Vol.86 (7), p.1908-1910

2009

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Analysis of post-stress effects in passivated MOSFET's after hot-carrier stress

ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.437-440

1991

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IEEE_Xplore

Dynamic effects in hot-carrier degradation relevant for CMOS operation

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.453-460

1992

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IEEE_Xplore

Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectrics

Microelectronic engineering, 2004-11, Vol.75 (4), p.443-452

2004

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Negative-gate to substrate erase transient simulation for flash memory

Microelectronic engineering, 2007, Vol.84 (1), p.101-104

2007

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Random telegraph signal noise: A probe for hot-carrier degradation effects in submicrometer MOSFET's?

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.605-608

1992

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IEEE_Xplore

Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique

Microelectronic engineering, 2004-04, Vol.72 (1), p.342-346

2004

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Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Microelectronic engineering, 2001-08, Vol.56 (3), p.353-358

2001

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Degradation mechanisms in SOI n-channel LDMOSFETs

Microelectronic engineering, 2001-11, Vol.59 (1), p.489-495

2001

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The impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin film transistors

Microelectronic engineering, 1999, Vol.45 (4), p.299-310

1999

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A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors

Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators

Hot carrier effects in n-MOSFETs with SiO 2/HfO 2/HfSiO gate stack and TaN metal gate

From defects creation to circuit reliability – A bottom-up approach (invited)

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Impact of increased resistive losses of metal interconnects upon ULSI devices reliability and functionality

Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs

Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

Comparison of La-based high- k dielectrics: HfLaSiON and HfLaON

CHC degradation of strained devices based on SiON and high- k gate dielectric materials

Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

Hot-carrier damage from high to low voltage using the energy-driven framework

Nature and location of interface traps in RF LDMOS due to hot carriers

Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

Analysis of post-stress effects in passivated MOSFET's after hot-carrier stress

Dynamic effects in hot-carrier degradation relevant for CMOS operation

Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectrics

Negative-gate to substrate erase transient simulation for flash memory

Random telegraph signal noise: A probe for hot-carrier degradation effects in submicrometer MOSFET's?

Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique

Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

Degradation mechanisms in SOI n-channel LDMOSFETs

The impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin film transistors

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