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Low-Noise Si-JFETs Enhanced by Split-Channel Concept

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4789-4793

2020

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Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767

2014

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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10

2023

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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681

2020

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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12158-12162

2021

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Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

IEEE transactions on power electronics, 2014-10, Vol.29 (10), p.5129-5135

2014

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1488-1501

2013

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On-Glass Thin Film Transistor Based on p-i-n Amorphous Silicon Junction

2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), 2021, p.60-63

2021

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High-Performance 700 V SiC MOSFETs for the Industrial Market

2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019, p.410-415

2019

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Superjunction Power Devices, History, Development, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.713-727

2017

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GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

IEEE transactions on power electronics, 2020-06, Vol.35 (6), p.6315-6331

2020

Volltextzugriff (PDF)

Model Based Junction Temperature Profile Control of SiC MOSFETs in DC Power Cycling for Accurate Reliability Assessments

IEEE transactions on industry applications, 2024, p.1-9

2024

Volltextzugriff (PDF)

Vertical P-TFET With a P-Type SiGe Pocket

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-1

2020

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A high temperature silicon carbide mosfet power module with integrated silicon-on-insulator-based gate drive

IEEE transactions on power electronics, 2015-03, Vol.30 (3), p.1432-1445

2015

Volltextzugriff (PDF)

Switching Transient Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation

IEEE transactions on power electronics, 2024-05, p.1-10

2024

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High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

IEEE transactions on power electronics, 2016-07, Vol.31 (7), p.4742-4754

2016

Volltextzugriff (PDF)

Analysis of Low Frequency Noise in Schottky Junction Trigate Silicon Nanowire FET on Bonded SOI Substrate

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4667-4673

2022

Volltextzugriff (PDF)

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

IEEE transactions on power electronics, 2018-05, Vol.33 (5), p.4317-4327

2018

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Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices

IEEE transactions on power electronics, 2019-08, Vol.34 (8), p.7922-7932

2019

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Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4079-4084

2020

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The Trench Power MOSFET: Part I-History, Technology, and Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691

2017

Volltextzugriff (PDF)

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Low-Noise Si-JFETs Enhanced by Split-Channel Concept

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

On-Glass Thin Film Transistor Based on p-i-n Amorphous Silicon Junction

High-Performance 700 V SiC MOSFETs for the Industrial Market

Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Superjunction Power Devices, History, Development, and Future Prospects

GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

Model Based Junction Temperature Profile Control of SiC MOSFETs in DC Power Cycling for Accurate Reliability Assessments

Vertical P-TFET With a P-Type SiGe Pocket

A high temperature silicon carbide mosfet power module with integrated silicon-on-insulator-based gate drive

Switching Transient Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation

High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

Analysis of Low Frequency Noise in Schottky Junction Trigate Silicon Nanowire FET on Bonded SOI Substrate

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices

Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor

The Trench Power MOSFET: Part I-History, Technology, and Prospects

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