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Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials science & engineering. R, Reports : a review journal, 2015-08, Vol.94, p.1-56

2015

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

Nature nanotechnology, 2015-02, Vol.10 (2), p.140-144

2015

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Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Advanced functional materials, 2021-02, Vol.31 (7), p.2008452-n/a

2021

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Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

Nano letters, 2012-03, Vol.12 (3), p.1317-1323

2012

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Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Advanced materials (Weinheim), 2016-10, Vol.28 (38), p.8446-8454

2016

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (42), p.11255-1126

2018

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AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template

Journal of alloys and compounds, 2019-07, Vol.794, p.8-12

2019

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Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

Nanoscale, 2019-10, Vol.11 (4), p.18746-18757

2019

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Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2020-07, Vol.217 (14), p.n/a

2020

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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

Nanoscale research letters, 2021-10, Vol.16 (1), p.159-159, Article 159

2021

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High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Advanced materials (Weinheim), 2016-09, Vol.28 (36), p.7978-7983

2016

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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Journal of crystal growth, 2021-12, Vol.575, p.126325, Article 126325

2021

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Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Advanced functional materials, 2018-08, Vol.28 (32), p.n/a

2018

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Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers

Physica status solidi. A, Applications and materials science, 2020-07, Vol.217 (14), p.n/a

2020

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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1059-1065

2015

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Ohmic contacts to Al‐rich AlGaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600842-n/a

2017

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In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique

Journal of the American Ceramic Society, 2020-04, Vol.103 (4), p.2389-2398

2020

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Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

Journal of crystal growth, 2020-03, Vol.534, p.125475, Article 125475

2020

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Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD

Journal of crystal growth, 2019-03, Vol.510, p.47-49

2019

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Deep traps in GaN-based structures as affecting the performance of GaN devices

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Ohmic contacts to Gallium Nitride materials

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template

Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Ohmic contacts to Al‐rich AlGaN heterostructures

In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique

Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes

Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD

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