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Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Journal of physics. Condensed matter, 2024-08, Vol.36 (32), p.325705

2024

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Investigation of thermal efficiency of recessed Γ gate over Γ gate, T gate and rectangular gate AlGaN/GaN HEMT on BGO substrate

Microelectronics and reliability, 2024-11, Vol.162, p.115522, Article 115522

2024

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Impact of SRH Lifetime on the Performance of Aluminium Gallium Nitride Based Ultraviolet -C Light Emitting Diodes

2024 28th International Symposium on VLSI Design and Test (VDAT), 2024, p.1-4

2024

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All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Solid-state electronics, 2020-02, Vol.164, p.107696, Article 107696

2020

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Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

IEEE transactions on electron devices, 2024-10, p.1-8

2024

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Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor

IEEE transactions on computer-aided design of integrated circuits and systems, 2024-10, p.1-1

2024

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pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption

Journal of colloid and interface science, 2021-02, Vol.583, p.331-339

2021

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Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2689-2693

2002

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Light-Induced Artificial Synapse Integrated With AlGaN Quantum Well DUV Source for Neuromorphic Computing

Journal of lightwave technology, 2024, p.1-6

2024

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Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6033-6038

2021

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Micro-Trench Deep-Ultraviolet LEDs with Boosted Efficiency for High-Speed Solar-Blind Optical Communication

Journal of lightwave technology, 2024-10, p.1-7

2024

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Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6604-6608

2024

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Achieving \ge 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-10, p.1-7

2024

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Analysis of Abnormal \textit - \textit Hump on Si } N } MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress

IEEE transactions on electron devices, 2024-02, p.1-6

2024

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Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2023-01, p.1-1

2023

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

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Pd/AlGaN/GaN HEMT-based room temperature hydrogen gas sensor

IEEE sensors journal, 2024-11, p.1-1

2024

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Investigation of a Novel Enhancement-Mode Al .\text} Ga .\text} N/AlN/Al } Ga - }\textit\text} N/GaN MIS-HEMT for High \textit} and Low \textit

IEEE transactions on electron devices, 2023-05, p.1-7

2023

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Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission

ACS photonics, 2016-11, Vol.3 (11), p.2030-2034

2016

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Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

2024 Device Research Conference (DRC), 2024, p.1-2

2024

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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1554-1560

2017

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Improving the Efficiency of Transverse Magnetic Polarized Emission from AlGaN Based LEDs by Using Nanowire Photonic Crystal

IEEE photonics journal, 2018-08, Vol.10 (4), p.1-11

2018

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Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.237-240

2024

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GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity

IEEE sensors journal, 2022-06, Vol.22 (12), p.1-1

2022

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Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Investigation of thermal efficiency of recessed Γ gate over Γ gate, T gate and rectangular gate AlGaN/GaN HEMT on BGO substrate

Impact of SRH Lifetime on the Performance of Aluminium Gallium Nitride Based Ultraviolet -C Light Emitting Diodes

All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor

pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption

Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures

Light-Induced Artificial Synapse Integrated With AlGaN Quantum Well DUV Source for Neuromorphic Computing

Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

Micro-Trench Deep-Ultraviolet LEDs with Boosted Efficiency for High-Speed Solar-Blind Optical Communication

Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

Achieving \ge 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer

Analysis of Abnormal \textit - \textit Hump on Si } N } MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress

Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

Pd/AlGaN/GaN HEMT-based room temperature hydrogen gas sensor

Investigation of a Novel Enhancement-Mode Al .\text} Ga .\text} N/AlN/Al } Ga - }\textit\text} N/GaN MIS-HEMT for High \textit} and Low \textit

Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

Improving the Efficiency of Transverse Magnetic Polarized Emission from AlGaN Based LEDs by Using Nanowire Photonic Crystal

Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity

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