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Oxidative enzyme activation of cellulose substrates for surface modification

Green chemistry : an international journal and green chemistry resource : GC, 2022-05, Vol.24 (1), p.426-44

2022

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High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Applied physics letters, 1996-02, Vol.68 (9), p.1267-1269

1996

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Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Applied physics letters, 2004-03, Vol.84 (12), p.2112-2114

2004

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Change and Continuity in American Colleges and Universities: Lessons from Nineteenth and Twentieth Century Innovations

1st edition, 2021

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Magnetism in n-type GaMnN grown by molecular beam epitaxy

Physica Status Solidi (b), 2005-12, Vol.242 (15), p.3182-3188

2005

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Nation-States and the Multinational Corporation: A Political Economy of Foreign Direct Investment

Jensen, Nathan M

1, 2008

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Bias-assisted photoelectrochemical etching of p-GaN at 300 K

Applied physics letters, 2000-08, Vol.77 (8), p.1227-1229

2000

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Direct observation of ballistic transport in GaAs

Physical review letters, 1985-11, Vol.55 (20), p.2200-2203

1985

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Preferential retention of genes from one parental genome after polyploidy illustrates the nature and scope of the genomic conflicts induced by hybridization

PLoS genetics, 2018-03, Vol.14 (3), p.e1007267-e1007267

2018

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Genetic and environmental drivers of large-scale epigenetic variation in Thlaspi arvense

PLoS genetics, 2022-10, Vol.18 (10), p.e1010452-e1010452

2022

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DNA methyltransferase CHROMOMETHYLASE3 prevents ONSEN transposon silencing under heat stress

PLoS genetics, 2021-08, Vol.17 (8), p.e1009710-e1009710

2021

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The native cistrome and sequence motif families of the maize ear

PLoS genetics, 2021-08, Vol.17 (8), p.e1009689-e1009689

2021

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High expression in maize pollen correlates with genetic contributions to pollen fitness as well as with coordinated transcription from neighboring transposable elements

PLoS genetics, 2020-04, Vol.16 (4), p.e1008462

2020

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Disentangling group specific QTL allele effects from genetic background epistasis using admixed individuals in GWAS: An application to maize flowering

PLoS genetics, 2020-03, Vol.16 (3), p.e1008241-e1008241

2020

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Quantifying the role of genome size and repeat content in adaptive variation and the architecture of flowering time in Amaranthus tuberculatus

PLoS genetics, 2023-12, Vol.19 (12), p.e1010865-e1010865

2023

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Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements

Applied physics letters, 1999-02, Vol.74 (5), p.720-722

1999

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A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

Journal of electronic materials, 1999-05, Vol.28 (5), p.572-579

1999

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Barrier height change in GaAs Schottky diodes induced by piezoelectric effect

Applied physics letters, 1991-09, Vol.59 (10), p.1191-1193

1991

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Electrical and magnetic characteristics of MBE-grown GaMnN

Journal of superconductivity, 2005-02, Vol.18 (1), p.69-73

2005

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Effect of Wet Etching on the Magnetic Properties of n-type GaMnN Layers

Physics of Semiconductors; Part A, 2005, Vol.772, p.359-360

2005

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Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurements

Applied physics letters, 1996-09, Vol.69 (11), p.1599-1601

1996

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In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

Journal of applied physics, 1998-10, Vol.84 (7), p.3741-3746

1998

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Energy band discontinuities in heterojunctions measured by internal photoemission

Applied physics letters, 1985-09, Vol.47 (5), p.503-505

1985

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4 × 4 matrix method for biaxial media and its application to liquid crystal displays

Japanese Journal of Applied Physics, 1996-09, Vol.35 (9B), p.L1204-L1207

1996

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Silicon-induced local interface dipole in Al/GaAs(001) Schottky diodes

Applied physics letters, 1994-02, Vol.64 (8), p.988-990

1994

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Oxidative enzyme activation of cellulose substrates for surface modification

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Change and Continuity in American Colleges and Universities: Lessons from Nineteenth and Twentieth Century Innovations

Magnetism in n-type GaMnN grown by molecular beam epitaxy

Nation-States and the Multinational Corporation: A Political Economy of Foreign Direct Investment

Bias-assisted photoelectrochemical etching of p-GaN at 300 K

Direct observation of ballistic transport in GaAs

Preferential retention of genes from one parental genome after polyploidy illustrates the nature and scope of the genomic conflicts induced by hybridization

Genetic and environmental drivers of large-scale epigenetic variation in Thlaspi arvense

DNA methyltransferase CHROMOMETHYLASE3 prevents ONSEN transposon silencing under heat stress

The native cistrome and sequence motif families of the maize ear

High expression in maize pollen correlates with genetic contributions to pollen fitness as well as with coordinated transcription from neighboring transposable elements

Disentangling group specific QTL allele effects from genetic background epistasis using admixed individuals in GWAS: An application to maize flowering

Quantifying the role of genome size and repeat content in adaptive variation and the architecture of flowering time in Amaranthus tuberculatus

Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements

A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

Barrier height change in GaAs Schottky diodes induced by piezoelectric effect

Electrical and magnetic characteristics of MBE-grown GaMnN

Effect of Wet Etching on the Magnetic Properties of n-type GaMnN Layers

Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurements

In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

Energy band discontinuities in heterojunctions measured by internal photoemission

4 × 4 matrix method for biaxial media and its application to liquid crystal displays

Silicon-induced local interface dipole in Al/GaAs(001) Schottky diodes

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