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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.945-953

2008

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2023, p.1-3

2023

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

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Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2612-2615

2023

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10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

IEEE electron device letters, 2021-06, Vol.42 (6), p.808-811

2021

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Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3861-3868

2022

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Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532

2022

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Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

IEEE transactions on electron devices, 2024-10, p.1-7

2024

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Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

IEEE electron device letters, 2024-10, Vol.45 (10), p.1721-1723

2024

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Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.1079-1082

2024

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Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6033-6038

2021

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Demonstration of Effective Intrinsic Electron Velocity > 10 ^} cm/s in Ultrawide Bandgap Al } Ga } N Channel HEMTs

IEEE transactions on electron devices, 2024-10, p.1-5

2024

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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-09, p.1-8

2024

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

IEEE electron device letters, 2015-10, Vol.36 (10), p.1011-1014

2015

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GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

IEEE electron device letters, 2022-05, Vol.43 (5), p.697-700

2022

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Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-4

2020

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Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2023-01, p.1-1

2023

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

An AlN/Al0.85Ga0.15N high electron mobility transistor

Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

Demonstration of Effective Intrinsic Electron Velocity > 10 ^} cm/s in Ultrawide Bandgap Al } Ga } N Channel HEMTs

Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

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