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Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
Ist Teil von
Journal of crystal growth, 2005-07, Vol.281 (1), p.55-61
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2005
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
The influence of high temperature AlN buffer layers on the morphology, structural and optical characteristics of
a-plane GaN grown by hydride vapour phase epitaxy on
r-plane sapphire was investigated. While the morphology of the
a-GaN was found to be significantly improved by using
a-plane AlN buffer layer similarly to the effect observed in
c-plane hydride vapour phase epitaxy GaN growth, the microstructure ensemble was revealed to be more complicated in comparison to that of the
c-plane GaN. Higher dislocation density and prismatic stacking faults were observed. Moreover, in-plane anisotropic structural characteristics were revealed by high resolution X-ray diffraction employing azimuthal dependent and edge X-ray measurement symmetric geometry. In addition, the near band edge photoluminescence peaks, red-shifted with respect to that in
c-plane GaN were observed. The latter were explained by the influence of the higher defect density and more complex strain distribution.