Details

Autor(en) / Beteiligte

• Paskova, T.
• Darakchieva, V.
• Paskov, P. P.
• Birch, J.
• Valcheva, E.
• Persson, P. O. Å.
• Arnaudov, B.
• Tungasmita, S.
• Monemar, B.

Titel

Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties

Ist Teil von

• Physica status solidi. C, 2005-05, Vol.2 (7), p.2027-2031

Ort / Verlag

Berlin: WILEY-VCH Verlag

Erscheinungsjahr

2005

Link zum Volltext

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Nonpolar GaN thick films with [11‐20] orientation were grown on [1‐102] oriented sapphire by hydride vapour phase epitaxy (HVPE) utilizing reactively sputtered AlN buffers. Growth rate and microstructure of such films were investigated and compared to those in HVPE [0001] oriented GaN thick films. The structural parameters show an angular azimuth dependence implying in‐plane non‐homogeneity. The lattice parameters and strain components were determined by using plane and edge symmetric measurement geometries. A red shift observed in the near band edge photoluminescence is explained by the specific strain distribution studied independently by X‐ray diffraction. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)