Details

Autor(en) / Beteiligte

• Zhou, Yan
• Ramaneti, Rajesh
• Anaya, Julian
• Korneychuk, Svetlana
• Derluyn, Joff
• Sun, Huarui
• Pomeroy, James
• Verbeeck, Johan
• Haenen, Ken
• Kuball, Martin

Titel

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Ist Teil von

• Applied physics letters, 2017-07, Vol.111 (4)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2017

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κ Dia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κ Dia in the measured 25–225 °C range. Device simulation using the experimental κ Dia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.