Details

Autor(en) / Beteiligte

• Huang, J.J.
• Hattendorf, M.
• Feng, M.
• Lambert, D.J.H.
• Shelton, B.S.
• Wong, M.M.
• Chowdhury, U.
• Zhu, T.G.
• Kwon, H.K.
• Dupuis, R.D.

Titel

Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

Ist Teil von

• IEEE electron device letters, 2001-04, Vol.22 (4), p.157-159

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2001

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• We have demonstrated state-of-the-art performance of AlGaN/GaN heterojunction bipolar transistors (HBTs) with a common emitter (CE) current gain of 31 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base-emitter interface recombination current. We also observed an increase of collector-emitter offset voltage with decrease of temperature. The increase of V/sub CEOFF/ at lower temperature is related to an increase of V/sub BE/ as the base bulk current is increased, or to the reduction of the ideality factor n/sub BE/.