Details

Autor(en) / Beteiligte

• Mao, Wei
• She, Wei-Bo
• Yang, Cui
• Zhang, Chao
• Zhang, Jin-Cheng
• Ma, Xiao-Hua
• Zhang, Jin-Feng
• Liu, Hong-Xia
• Yang, Lin-An
• Zhang, Kai
• Zhao, Sheng-Lei
• Chen, Yong-He
• Zheng, Xue-Feng
• Hao, Yue

Titel

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Ist Teil von

• Chinese physics B, 2014-08, Vol.23 (8), p.487-494

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.