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Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates

Journal of physics. D, Applied physics, 2019-03, Vol.52 (11), p.115102

2019

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Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Journal of physics. D, Applied physics, 2022-06, Vol.55 (25)

2022

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A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

IEEE access, 2024, p.1-1

2024

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The 2020 UV emitter roadmap

Journal of physics. D, Applied physics, 2020-12, Vol.53 (50), p.503001

2020

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Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes

Applied physics express, 2022-06, Vol.15 (6), p.64003

2022

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Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Optical materials, 2024-04, Vol.150, Article 115135

2024

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263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

Applied physics express, 2022-05, Vol.15 (5), p.55501

2022

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Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

Journal of physics. D, Applied physics, 2024-04, Vol.57 (14), p.145106

2024

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Weak metastability of Al x Ga1−x N (x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

Applied physics express, 2022-06, Vol.15 (7)

2022

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Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement

Electronics letters, 2020-07, Vol.56 (15), p.789-791

2020

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Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Journal of physics. D, Applied physics, 2023-01, Vol.56 (2), p.25105

2023

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Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(1), 115, pp.25-32

2024

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Optical properties of quasi-ordered 112̅2 AlGaN multi-quantum-well nanorod arrays

Journal of alloys and compounds, 2021-12, Vol.885, Article 161166

2021

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Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

Electronics letters, 2018-07, Vol.54 (14), p.896-897

2018

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Electron mobility in asymmetric GaN/AlGaN quantum well transistor structure: effect of alloy disorder scattering

Physica scripta, 2021-12, Vol.96 (12), p.124058

2021

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Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

Biosensors & bioelectronics, 2024-08, Vol.257, p.116171, Article 116171

2024

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Stability, electronic and vibrational properties of GaAlN wurtzoid molecules and nanocrystals: A DFT study

Vacuum, 2018-07, Vol.153, p.17-23

2018

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Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method

Applied physics express, 2023-10, Vol.16 (10), p.104001

2023

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1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

IEEE electron device letters, 2015-04, Vol.36 (4), p.375-377

2015

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Dislocation density as a factor compensating the polarization doping effect in graded p-AlGaN contact layers

Journal of alloys and compounds, 2024-05, Vol.985, Article 174034

2024

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High Al-content AlGaN channel high electron mobility transistors on silicon substrate

e-Prime, 2023-03, Vol.3, p.100114, Article 100114

2023

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120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

Optical materials, 2024-02, Vol.148, p.114846, Article 114846

2024

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Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides

Semiconductor science and technology, 2014-11, Vol.29 (11)

2014

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Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

Journal of physics. D, Applied physics, 2020-02, Vol.53 (7), p.73002

2020

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External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs

ACS applied electronic materials, 2020-07, Vol.2 (7), p.1892-1907

2020

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Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates

Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

The 2020 UV emitter roadmap

Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes

Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

Weak metastability of Al x Ga1−x N (x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement

Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier

Optical properties of quasi-ordered 112̅2 AlGaN multi-quantum-well nanorod arrays

Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

Electron mobility in asymmetric GaN/AlGaN quantum well transistor structure: effect of alloy disorder scattering

Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

Stability, electronic and vibrational properties of GaAlN wurtzoid molecules and nanocrystals: A DFT study

Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Dislocation density as a factor compensating the polarization doping effect in graded p-AlGaN contact layers

High Al-content AlGaN channel high electron mobility transistors on silicon substrate

120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides

Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs

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