Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
We report and compare a sensitive heavy metal ion sensor for copper ion (Cu
2+
), iron ion (Fe
3+
), lead ion (Pb
2+
) and cadmium ion (Cd
2+
) detection. The sensor consists of AlGaN/GaN high electron mobility transistor (HEMT) with L-cysteine functionalized active region on the gate. The sensor exhibits fast and stable response after the introduction of various heavy metal ions ranging from 0 mg/L to 20 mg/L to combine with the modifier to form stable complexes. The current response of the HEMT device shows a related behavior that decreases with increasing concentration of introduced heavy metal ions. Furthermore, the AlGaN/GaN HEMT-based sensor exhibited high sensitivities of 92.32 µA/(mg/L), 760.22 µA/(mg/L), 137.05 µA/(mg/L) and 63.63 µA/(mg/L) for the detection of Cu
2+
, Fe
3+
, Pb
2+
and Cd
2+
, respectively. Therefore, the proposed functionalized AlGaN/GaN HEMT device displays potential in the application of efficient, fast and convenient detection of heavy metal ions.