Journal of electronic materials, 2022-07, Vol.51 (7), p.4095-4103
2022
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- Autor(en) / Beteiligte
- Titel
- Small-Signal Analysis of Double-Channel AlGaN/GaN HEMT and MOSHEMT with Undoped Barrier for Microwave Applications
- Ist Teil von
- Journal of electronic materials, 2022-07, Vol.51 (7), p.4095-4103
- Ort / Verlag
- New York: Springer US
- Erscheinungsjahr
- 2022
- Quelle
- SpringerLink
- Beschreibungen/Notizen
- In this work, DC and RF performance of a double-channel AlGaN/GaN HEMT (DCHEMT) and a double-channel AlGaN/GaN MOSHEMT (DCMOSHEMT) with an undoped barrier layer is presented. The double-channel heterostructure is grown on silicon (Si) substrate. Linearity and intermodulation distortion (IMD3) analysis has been optimized using various figures of merit including transconductance ( g m ), high-order transconductance (gm2 and gm3), VIP3 and IMD3. It has been observed that the undoped barrier layer provides the advantages of increased drain current, broader peak of transconductance and high threshold voltage in DCMOSHEMT. The DCHEMT with high I ON / I OFF of 1.13 × 10 15 can be used for switching applications. DCHEMT with maximum cutoff frequency ( f t ) of 75.1 GHz and maximum oscillation frequency ( f max ) of 145 GHz can also be used for microwave applications without compromising with the gate length.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0361-5235eISSN: 1543-186XDOI: 10.1007/s11664-022-09652-1Titel-ID: cdi_proquest_journals_2672175544
- Format
- –
- Schlagworte
- Aluminum gallium nitrides, Barrier layers, Calibration, Characterization and Evaluation of Materials, Chemistry and Materials Science, Electronics and Microelectronics, Gallium nitrides, Heterostructures, High electron mobility transistors, Instrumentation, Intermodulation distortion, Materials Science, Optical and Electronic Materials, Original Research Article, Silicon substrates, Simulation, Small signal analysis, Solid State Physics, Threshold voltage, Transconductance