Details

Autor(en) / Beteiligte

• Nigam, Adarsh
• Goel, Neeraj
• Bhat, Thirumaleshwara N
• Tawabur Rahman, Md
• Dolmanan, Surani Bin
• Qiao, Qiquan
• Tripathy, Sudhiranjan
• Kumar, Mahesh

Titel

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Ist Teil von

• Sensors and actuators. B, Chemical, 2020-04, Vol.309, p.127832, Article 127832

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •A MoS2 functionalized Au gated AlGaN/ GaN HEMT sensor has been developed for the detection of toxic Hg2+ ions.•The synthesis of MoS2 was performed by hydrothermal approach.•The characterization suggests the vertically aligned, flower like MoS2 formation.•The sensor exhibits a rapid response of 1.8 s at 1 ppt, high sensitivity of 0.64 μA/ppb and high selectivity for Hg2+ ions. A sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT). The vertically aligned, flower-like MoS2 structures are synthesized through a simple hydrothermal route and applied on the gate region of AlGaN/GaN HEMT. The scanning electron microscopy, Raman spectroscopy, and X-ray diffraction are performed for structural characterization of MoS2. Further, the sensing of Hg2+ ions is performed by electrical characterizations of MoS2 functionalized AlGaN/GaN HEMT. The sensor showed an excellent sensitivity of 0.64 μA/ppb and detection limit of 0.01152 ppb with the rapid response time of 1.8 s. The sensor exhibits the linear range of detection from 0.1 ppb to 100 ppb and highly selective behavior towards Hg2+ ions. The results demonstrated that the MoS2 possess excellent Hg2+ ions capture property, that could be attributed to the complexation of Hg2+ ions with sulfur and the electrostatic interaction between MoS2 and Hg2+ ions alters the drain to source current (IDS) of the HEMT at a constant drain to source voltage (VDS). Therefore, the MoS2 based AlGaN/ GaN HEMT devices have a huge potential for next-generation ion sensing applications.