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Details

Autor(en) / Beteiligte
Titel
Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater
Ist Teil von
  • Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2019
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • In this study, aluminum gallium nitride/gallium nitride heterostructure grown on the sapphire substrate is used as the photoanodes for the generation of hydrogen gas and formic acid through water photoelectrolysis and carbon dioxide reduction, respectively, in photoelectrochemical reaction. These processes are conducted using carbon dioxide-containing sodium chloride aqueous solution and seawater, as the electrolytes. The typical production rates of formic acid and hydrogen gas produced from photoanodes made of aluminum gallium nitride/gallium nitride heterostructure are significantly higher than those of photoanodes made of a single gallium nitride epitaxial layer. This enhancement in production rate is attributed to facilitated transport of photogenerated electrons by two-dimensional electron gas at the aluminum gallium nitride/gallium nitride interface from the working area to the ohmic metal electrode on the photoelectrodes. These processes are demonstrated using photoelectrochemical (PEC) reaction with working electrodes made of AlGaN/GaN heteroepitaxial layers on a sapphire substrate. The electrolytes used in this study are CO2-containing NaCl aqueous solution and seawater. [Display omitted] •The hydrogen gas and formic acid are produced through water photoelectrolysis and CO2 reduction, respectively.•The PEC reactions use working electrodes made of AlGaN/GaN heteroepitaxial layers grown on the sapphire substrate.•The electrolytes used in this study are environmentally-friendly CO2-containing NaCl aqueous solution and seawater.•This enhancement in production rate is attributed to the two-dimensional electron gas at the AlGaN/GaN interface.

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