Details

Autor(en) / Beteiligte

• Bajaj, Sanyam
• Hung, Ting-Hsiang
• Akyol, Fatih
• Nath, Digbijoy
• Rajan, Siddharth

Titel

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Ist Teil von

• Applied physics letters, 2014-12, Vol.105 (26)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2014

Link zum Volltext

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the same operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.