Details

Autor(en) / Beteiligte

• Zheng, Xuefeng
• Chen, Anshuai
• Zhang, Hao
• Wang, Xiaohu
• Wang, Yingzhe
• Hua, Ning
• Chen, Kai
• Wang, Maosen
• Zhang, Quanyuan
• Ma, Xiaohua
• Hao, Yue

Titel

Degradation mechanism of fluorine treated enhancement-mode AlGaN/GaN HEMTs under high reverse gate bias

Ist Teil von

• 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2020

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The degradation mechanism of fluorine treated enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) under high reverse gate bias was studied in this paper. The experimental results show that E-mode HEMTs using fluorine ion implantation shows a significant negative shift of threshold voltage (Vth) during the long-term high reverse gate bias. Three main degradation mechanisms are used to explain this phenomenon. In this paper, F ions impact ionization is found to be the main reason for the device degradation under high reverse gate bias. Moreover, it is also observed that the degradation of V th can be partially recovered after temperature annealing.