IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2973-2978
2012
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- Autor(en) / Beteiligte
- Titel
- A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs
- Ist Teil von
- IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2973-2978
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2012
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- A temperature-dependent impact-ionization-initiated RF breakdown model in the 2DEG channel of AlGaN/GaN HFETs is reported. When operating these devices in RF power amplifier circuits, impact ionization in the channel has a significant effect upon gain saturation, power-added efficiency, and output power. An analytical physics-based model of channel breakdown is formulated based on TCAD investigations of the internal device behavior. This model is integrated with an existing physics-based HFET compact model and accurately predicts large-signal device performance. Values of thermal resistance and the breakdown temperature coefficient were extracted from simulations of an industrial HFET and are in agreement with the literature, thus validating that the model captures the dominant breakdown mechanism.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2012.2211360Titel-ID: cdi_ieee_primary_6275484
- Format
- –
- Schlagworte
- Aluminum gallium nitride, Aluminum gallium nitrides, Amplifiers, Applied sciences, Avalanche breakdown, Breakdown, Channels, Circuit properties, Devices, Electric breakdown, Electric, optical and optoelectronic circuits, Electronic circuits, Electronics, Exact sciences and technology, Gallium nitride, Gallium nitrides, HEMTs, Impact ionization, Ionization, Mathematical models, Microwave and submillimeter wave devices, electron transfer devices, Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits, microwave FET amplifiers, MODFETs, Radio frequencies, Radio frequency, semiconductor device modeling, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors