Details

Autor(en) / Beteiligte

• Ando, Yuji
• Takahashi, Hidemasa
• Makisako, Ryutaro
• Wakejima, Akio
• Suda, Jun

Titel

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Ist Teil von

• Electronics letters, 2023-05, Vol.59 (10), p.n/a

Ort / Verlag

Stevenage: John Wiley & Sons, Inc

Erscheinungsjahr

2023

Quelle

Wiley Online Library - AutoHoldings Journals

Beschreibungen/Notizen

• This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. The authors have developed two different gate structures that were a field‐plated gate using the lift‐off process and a Y‐shaped gate using the ion‐milling process. Fabricated HEMTs using these different gate structures exhibited nearly equivalent DC characteristics. The field‐plated gate device showed a unity current gain cutoff frequency (fT) of 35 GHz and a maximum oscillation frequency (fmax) of 106 GHz, while the Y‐shaped gate device showed fT of 36 GHz and fmax of 115 GHz. The equivalent circuit analysis indicated a decrease in the gate‐drain capacitance and the drain conductance is responsible for the improved fmax in the Y‐shaped gate device. This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique.