Details

Autor(en) / Beteiligte

• Ghosh, Somrita
• Acharyya, Aritra
• Biswas, Arindam
• Banerjee, Amit
• Inokawa, Hiroshi
• Satoh, Hiroaki
• Seteikin, Alexey Y.
• Samusev, I. G.

Titel

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Ist Teil von

• IEEE access, 2024, Vol.12, p.16022-16038

Ort / Verlag

Piscataway: IEEE

Erscheinungsjahr

2024

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on GaN/AlxGa<inline-formula> <tex-math notation="LaTeX">_{1{-}x}\text{N} </tex-math></inline-formula> material system has been proposed in this paper which is capable of detecting infrared (IR) signal up to <inline-formula> <tex-math notation="LaTeX">6.0~\mu \text{m} </tex-math></inline-formula> wavelength. A self-consistent quantum drift-diffusion (SCQDD) model developed by the authors, has been used to determine the current-voltage characteristics under dark and illuminated conditions, spectral response, excess noise properties, signal-to-noise ratio, time and frequency responses. Results show that the proposed MQB APD attains peak responsivity of 60 AW<inline-formula> <tex-math notation="LaTeX">^{-1} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">3.0\, \mu \text{m} </tex-math></inline-formula> wavelength. Incorporation of a dedicated thin <inline-formula> <tex-math notation="LaTeX">n </tex-math></inline-formula>-type GaN layer for avalanche multiplication in between the <inline-formula> <tex-math notation="LaTeX">p^{+} </tex-math></inline-formula>-GaN contact layer and MQB constant-field drift-layer ensures significantly low noise equivalent power under normal operating conditions at room temperature (300 K). Optical pulse response of the device reveals that special restriction over the charge multiplication able to supress the minor peaks of the current response and consequently significantly narrow pulse response can be achieved. Narrow pulse response leads to broad bandwidth of 274.5 GHz, which is significantly broader than the existing IR photo-detectors.