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Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress

Materials science forum, 2022-05, Vol.1062, p.676-682

2022

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Hybrid Termination With Wide Trench for 4H-SiC Super-Junction Devices

IEEE electron device letters, 2021-02, Vol.42 (2), p.216-219

2021

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Optimal Dead-Time Control Scheme for Extended ZVS Range and Burst-Mode Operation of Phase-Shift Full-Bridge (PSFB) Converter at Very Light Load

IEEE transactions on power electronics, 2019-11, Vol.34 (11), p.10823-10832

Kim, Chong-Eun

2019

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4H-SiC Super-Junction JFET: Design and Experimental Demonstration

IEEE electron device letters, 2020-03, Vol.41 (3), p.445-448

2020

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Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes

IEEE electron device letters, 2022-05, Vol.43 (5), p.701-704

2022

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New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping

IEEE electron device letters, 2015-01, Vol.36 (1), p.47-49

2015

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Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5055-5061

2021

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Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

IEEE electron device letters, 2020-12, Vol.41 (12), p.1758-1761

2020

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The Trench Power MOSFET: Part I-History, Technology, and Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691

2017

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Superjunction IGBT with split carrier storage layer

Semiconductor science and technology, 2024-07, Vol.39 (7), p.75003

2024

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A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

Semiconductor science and technology, 2024-01, Vol.39 (1), p.15007

2024

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Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET

IEEE electron device letters, 2022-07, Vol.43 (7), p.1093-1096

2022

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Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4853-4859

2024

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Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5034-5040

2021

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Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.48-51

2024

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SiC Super-Junction MOSFET robustness assessment and method to improve avalanche capability

Microelectronics and reliability, 2024-06, Vol.157, p.115418, Article 115418

2024

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A 500 V Super Field Plate LIGBT With Excellent Voltage Blocking Capability

IEEE electron device letters, 2024-06, Vol.45 (6), p.1060-1063

2024

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Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

Materials science forum, 2020-07, Vol.1004, p.758-763

2020

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Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.14501

2023

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Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit

IEEE electron device letters, 2015-12, Vol.36 (12), p.1348-1350

2015

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Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Chinese physics B, 2022-09, Vol.31 (9), p.98502-696

2022

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650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

IEEE electron device letters, 2022-04, Vol.43 (4), p.592-595

2022

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Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1798-1804

2022

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Design and Fabrication of 1.92 kV 4H-SiC Super-Junction SBD With Wide-Trench Termination

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5674-5681

2021

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Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.611-616

2021

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Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress

Hybrid Termination With Wide Trench for 4H-SiC Super-Junction Devices

Optimal Dead-Time Control Scheme for Extended ZVS Range and Burst-Mode Operation of Phase-Shift Full-Bridge (PSFB) Converter at Very Light Load

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes

New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping

Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

The Trench Power MOSFET: Part I-History, Technology, and Prospects

Superjunction IGBT with split carrier storage layer

A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET

Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress

Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination

SiC Super-Junction MOSFET robustness assessment and method to improve avalanche capability

A 500 V Super Field Plate LIGBT With Excellent Voltage Blocking Capability

Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability

Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Design and Fabrication of 1.92 kV 4H-SiC Super-Junction SBD With Wide-Trench Termination

Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

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