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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336

2018

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Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4658-4661

2020

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Novel Designed SiC Devices for High Power and High Efficiency Systems

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.382-389

2015

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All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4004-4008

2015

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Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2569-2577

2006

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A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.896-903

2008

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Localization and quantification of noise sources in four-gate field-effect-transistors

International journal of numerical modelling, 2010-07, Vol.23 (4-5), p.285-300

2010

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Magnetic slip ring - Rotary transformer based novel non-contact signal transfer mechanism for spacecraft application

2014 Annual International Conference on Emerging Research Areas: Magnetics, Machines and Drives (AICERA/iCMMD), 2014, p.1-5

2014

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Noise characteristics of long-wavelength monolithically integrated pin-FETS

Electronics & communications in Japan. Part 2, Electronics, 1994-07, Vol.77 (7), p.11-20

1994

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MOS Field-Effect Transistor (MOSFET)

Practical Electrical Engineering, p.919-972

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Charge-based Model for Junction FETs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2694-2698

2018

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Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.6253-6258

2022

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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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An Experimental Evaluation of SiC Switches in Soft-Switching Converters

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2527-2538

2014

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A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

2021 IEEE Sensors, 2021, p.1-4

2021

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Compact Modeling of SiC and GaN Junction FETs at High Temperature

Materials science forum, 2019-07, Vol.963, p.683-687

2019

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Design of 1.2 kV Power Switches With Low R}} Using GaN-Based Vertical JFET

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2571-2578

2015

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SiC power-switching devices-the second electronics revolution?

Proceedings of the IEEE, 2002-06, Vol.90 (6), p.956-968

2002

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Measurement of low-frequency noise of modern low-noise junction field effect transistors

IEEE transactions on instrumentation and measurement, 2005-12, Vol.54 (6), p.2427-2432

Levinzon, F.A.

2005

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GaN/AlGaN p-channel inverted heterostructure JFET

IEEE electron device letters, 2002-08, Vol.23 (8), p.452-454

2002

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor

IEEE electron device letters, 2007-08, Vol.28 (8), p.737-739

2007

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A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: source inserted double-gate structure with a supplementary highly doped region

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.1940-1948

2005

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A 2055-V (at 0.7 \hbox^) 24-A (at 706 \hbox^) Normally On 4H-SiC JFET With 6.8- \hbox^ Active Area and Blocking-Voltage Capability Reaching the Material Limit

IEEE electron device letters, 2008-12, Vol.29 (12), p.1325-1327

2008

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1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

IEEE electron device letters, 2007-05, Vol.28 (5), p.404-407

2007

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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Novel Designed SiC Devices for High Power and High Efficiency Systems

All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors

Localization and quantification of noise sources in four-gate field-effect-transistors

Magnetic slip ring - Rotary transformer based novel non-contact signal transfer mechanism for spacecraft application

Noise characteristics of long-wavelength monolithically integrated pin-FETS

MOS Field-Effect Transistor (MOSFET)

Charge-based Model for Junction FETs

Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

An Experimental Evaluation of SiC Switches in Soft-Switching Converters

A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

Compact Modeling of SiC and GaN Junction FETs at High Temperature

Design of 1.2 kV Power Switches With Low R}} Using GaN-Based Vertical JFET

SiC power-switching devices-the second electronics revolution?

Measurement of low-frequency noise of modern low-noise junction field effect transistors

GaN/AlGaN p-channel inverted heterostructure JFET

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox

Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor

A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: source inserted double-gate structure with a supplementary highly doped region

A 2055-V (at 0.7 \hbox^) 24-A (at 706 \hbox^) Normally On 4H-SiC JFET With 6.8- \hbox^ Active Area and Blocking-Voltage Capability Reaching the Material Limit

1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

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