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Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1464-1478

2013

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.7340-7348

2022

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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1-7

2024

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(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767

2014

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Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

IEEE transactions on industry applications, 2023-03, Vol.59 (2), p.2326-2339

2023

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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10

2023

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Three-Terminal Si/SiC Hybrid Switch

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.8867-8871

2020

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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681

2020

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Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12158-12162

2021

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An Experimental Evaluation of SiC Switches in Soft-Switching Converters

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2527-2538

2014

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Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

IEEE transactions on power electronics, 2017-02, Vol.32 (2), p.1400-1410

2017

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Challenges Regarding Parallel Connection of SiC JFETs

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1449-1463

2013

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Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1488-1501

2013

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SiC gate-controlled bipolar-field-effect composite transistor with large on-state current

Micro & nano letters, 2019-12, Vol.14 (14), p.1406-1409

2019

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Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch

IEEE journal of emerging and selected topics in power electronics, 2019-09, Vol.7 (3), p.1566-1573

2019

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Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

IEEE transactions on power electronics, 2013-04, Vol.28 (4), p.1938-1945

2013

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SiC trench MOSFET with self-biased p-shield for low RON-SP and low OFF-state oxide field

IET power electronics, 2017-08, Vol.10 (10), p.1208-1213

2017

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A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

IEEE transactions on industry applications, 2011-01, Vol.47 (1), p.199-211

2011

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Design optimisation of self-powered gate driver for ultra-fast DC solid-state circuit breakers using SiC JFETs

IET power electronics, 2017-12, Vol.10 (15), p.2149-2156

2017

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Channel width effect on the operation of 4H‐SiC vertical JFETs

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600452-n/a

2017

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550 ^\hbox Integrated Logic Circuits using 6H-SiC JFETs

IEEE electron device letters, 2012-10, Vol.33 (10), p.1369-1371

2012

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Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter

Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

(Ultra)Wide-Bandgap Vertical Power FinFETs

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Three-Terminal Si/SiC Hybrid Switch

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

An Experimental Evaluation of SiC Switches in Soft-Switching Converters

Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

Challenges Regarding Parallel Connection of SiC JFETs

Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

SiC gate-controlled bipolar-field-effect composite transistor with large on-state current

Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch

Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

SiC trench MOSFET with self-biased p-shield for low RON-SP and low OFF-state oxide field

A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

Design optimisation of self-powered gate driver for ultra-fast DC solid-state circuit breakers using SiC JFETs

Channel width effect on the operation of 4H‐SiC vertical JFETs

550 ^\hbox Integrated Logic Circuits using 6H-SiC JFETs

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