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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

IEEE electron device letters, 2019-07, Vol.40 (7), p.1052-1055

2019

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Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

IEEE electron device letters, 2018-04, Vol.39 (4), p.568-571

2018

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MBE grown Ga2O3 and its power device applications

Journal of crystal growth, 2013-09, Vol.378, p.591-595

2013

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Development of gallium oxide power devices

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.21-26

2014

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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4433-4436

2024

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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5305-5312

2024

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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

IEEE electron device letters, 2022-08, Vol.43 (8), p.1307-1310

2022

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10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

IEEE electron device letters, 2023-07, Vol.44 (7), p.1048-1051

2023

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Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

IEEE electron device letters, 2018-09, Vol.39 (9), p.1381-1384

2018

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n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

IEEE electron device letters, 2022-04, Vol.43 (4), p.588-591

2022

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SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

IEEE electron device letters, 2021-01, Vol.42 (1), p.74-77

2021

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Diamond Metal-Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

IEEE electron device letters, 2014-11, Vol.35 (11), p.1112-1114

2014

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An improved model for current voltage characteristics of submicron SiC MESFETs

Solid-state electronics, 2016-07, Vol.121, p.54-61

2016

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SrSnO3 Field-Effect Transistors With Recessed Gate Electrodes

IEEE electron device letters, 2020-09, Vol.41 (9), p.1428-1431

2020

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Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm

IEEE electron device letters, 2021-09, Vol.42 (9), p.1272-1275

2021

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Impact of Device Parameters on the Performance of β-Ga2O3 Nanomembrane MESFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2557-2564

2024

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Impact Ionization in SOI MESFETs at the 32-nm Node

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.4143-4146

2016

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Normally-OFF Diamond Reverse Blocking MESFET

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6279-6285

2021

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Mist-CVD Grown Sn-Doped \alpha -Ga2O3 MESFETs

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3640-3644

2015

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Junctionless Field-Effect Transistors: Design, Modeling, and Simulation

1st edition., 2019

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Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4021-4026

2020

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SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE transactions on industrial electronics (1982), 2015-05, Vol.62 (5), p.3182-3191

2015

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High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Advanced functional materials, 2021-05, Vol.31 (21), p.n/a

2021

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Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-1

2020

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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

MBE grown Ga2O3 and its power device applications

Development of gallium oxide power devices

A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

Diamond Metal-Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

An improved model for current voltage characteristics of submicron SiC MESFETs

SrSnO3 Field-Effect Transistors With Recessed Gate Electrodes

Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm

Impact of Device Parameters on the Performance of β-Ga2O3 Nanomembrane MESFETs

Impact Ionization in SOI MESFETs at the 32-nm Node

Normally-OFF Diamond Reverse Blocking MESFET

Mist-CVD Grown Sn-Doped \alpha -Ga2O3 MESFETs

Junctionless Field-Effect Transistors: Design, Modeling, and Simulation

Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

SiC Integrated Circuit Control Electronics for High-Temperature Operation

High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

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