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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336

2018

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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3192-3198

2018

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Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers

Advanced optical materials, 2020-10, Vol.8 (20), p.n/a

2020

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Button shear testing for adhesion measurements of 2D materials

Nature communications, 2024-03, Vol.15 (1), p.2430-2430, Article 2430

2024

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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Scientific reports, 2022-11, Vol.12 (1), p.18743-18743, Article 18743

2022

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Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD11

2019

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Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

Crystals (Basel), 2023-10, Vol.13 (10), p.1474

2023

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A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures

Advanced materials interfaces, 2024-08, Vol.11 (23), p.n/a

2024

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InGaN GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

Nanotechnology, 2014-11, Vol.25 (45), p.455501-455501

2014

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Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.748-755

2021

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CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale

Micro and Nano Engineering, 2024-06, Vol.23, p.100256, Article 100256

2024

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PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Power electronic devices and components, 2023-03, Vol.4, p.100032, Article 100032

2023

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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

IEEE electron device letters, 2013-08, Vol.34 (8), p.978-980

2013

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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2

Surfaces (Basel), 2023-12, Vol.6 (4), p.351-363

2023

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Understanding the impact of heavy ions and tailoring the optical properties of large-area monolayer WS2 using focused ion beam

NPJ 2D materials and applications, 2023-03, Vol.7 (1), p.23-7, Article 23

2023

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The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Journal of crystal growth, 2015-03, Vol.414, p.200-204

2015

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Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.895-899

2015

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Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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GaN based HEMT technology for Power and RF applications

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.17-20

Heuken, Michael

2019

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Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1045-S1048

2009

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Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

Journal of crystal growth, 2013-11, Vol.383, p.1-8

2013

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Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes

Nanomaterials (Basel, Switzerland), 2019-05, Vol.9 (5), p.691

2019

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(Invited) MOCVD of III-V Compounds on Silicon Substrate-Status and Challenges

ECS transactions, 2014, Vol.61 (3), p.173-180

Heuken, Michael

2014

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Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (2), p.n/a

2019

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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers

Button shear testing for adhesion measurements of 2D materials

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures

InGaN GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale

PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2

Understanding the impact of heavy ions and tailoring the optical properties of large-area monolayer WS2 using focused ion beam

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

GaN based HEMT technology for Power and RF applications

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate

Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes

(Invited) MOCVD of III-V Compounds on Silicon Substrate-Status and Challenges

Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates

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