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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE transactions on industrial electronics (1982), 2020-09, Vol.67 (9), p.7375-7385, Article 7375

2020

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The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

IEEE transactions on industrial electronics (1982), 2015-01, Vol.62 (1), p.163-171

2015

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The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching

IEEE transactions on power electronics, 2016-06, Vol.31 (6), p.4526-4535, Article 4526

2016

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Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

Micromachines (Basel), 2024-06, Vol.15 (7), p.832

2024

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Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking

Energies (Basel), 2022-10, Vol.15 (20), p.7768

2022

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A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Energies (Basel), 2023-05, Vol.16 (11), p.4380

2023

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An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

IEEE transactions on power electronics, 2015-05, Vol.30 (5), p.2383-2394

2015

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Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Energies (Basel), 2021-10, Vol.14 (20), p.6834

2021

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Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

IEEE transactions on power electronics, 2015-12, Vol.30 (12), p.6978-6992

2015

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High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs

IEEE open journal of industry applications, 2024, Vol.5, p.235-252

2024

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Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

IEEE open journal of power electronics, 2021, Vol.2, p.145-154

2021

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Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of power electronics, 2021, Vol.2, p.265-276

2021

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Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of the Industrial Electronics Society, 2022, Vol.3, p.188-202

2022

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A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets

IEEE transactions on power electronics, 2019-06, Vol.34 (6), p.5737-5747

2019

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Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

IEEE open journal of the Industrial Electronics Society, 2022, Vol.3, p.65-80

2022

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Study on lifetime prediction considering fatigue accumulative effect for die‐attach solder layer in an IGBT module

IEEJ transactions on electrical and electronic engineering, 2018-04, Vol.13 (4), p.613-621

2018

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Analysis of DC offset in fault current caused by machines in a medium voltage distribution network

Journal of engineering (Stevenage, England), 2019-06, Vol.2019 (17), p.3494-3499

2019

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Condition monitoring for solder layer degradation in multi-device system based on neural network

Journal of engineering (Stevenage, England), 2019-06, Vol.2019 (17), p.3582-3586

2019

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Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

IEEE transactions on power electronics, 2021-03, Vol.36 (3), p.3279-3291

2021

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Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

IEEE transactions on industry applications, 2021-03, Vol.57 (2), p.1664-1676

2021

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Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

IEEE transactions on industrial electronics (1982), 2016-02, Vol.63 (2), p.849-863

2016

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Modeling the Impact of the Trench Depth on the Gate-Drain Capacitance in Power MOSFETs

IEEE electron device letters, 2011-09, Vol.32 (9), p.1269-1271

2011

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

IEEE transactions on power electronics, 2017-10, Vol.32 (10), p.7954-7966

2017

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A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfet s

IEEE transactions on power electronics, 2019-01, Vol.34 (6), p.5737

2019

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Capacitor Selection for Modular Multilevel Converter

IEEE transactions on industry applications, 2016-07, Vol.52 (4), p.3279-3293

2016

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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching

Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs

Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Study on lifetime prediction considering fatigue accumulative effect for die‐attach solder layer in an IGBT module

Analysis of DC offset in fault current caused by machines in a medium voltage distribution network

Condition monitoring for solder layer degradation in multi-device system based on neural network

Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Modeling the Impact of the Trench Depth on the Gate-Drain Capacitance in Power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfet s

Capacitor Selection for Modular Multilevel Converter

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